non-volatile memory (NVM)

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A Two-Step Time-Domain Logic-Compatible Embedded-Flash Computing-in-Memory Macro for On-Device AI

A Two-Step Time-Domain Logic-Compatible Embedded-Flash Computing-in-Memory Macro for On-Device AI 150 150
Author(s): Jiho Chun, Byeongseon Choi, Edward Jongyoon Choi, Sohmyung Ha, Ik-Joon Chang, Minkyu Je

Abstract:

Computing in memory (CIM) has emerged as a promising architecture that can significantly reduce power consumption and latency in edge artificial intelligence (AI) devices. For battery-constrained edge devices, non-volatile memories (NVMs) are ideal due to their ability to retain neural network parameters even when powered down, ensuring rapid response time …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3717139
Publisher: IEEE

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PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC

PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC 150 150
Author(s): Samyak Chakrabarty, Vinod Jacob, Mohammadreza Zeinali, Georgios Karfakis, Siyun Qiao, Ziyi Guo, Puneet Gupta, Subramanian Iyer, Sudhakar Pamarti

Abstract:

Compute-in-memory (CiM) accelerators perform matrix vector multiplications (MVMs) directly inside memory arrays, reducing data movement and improving both energy efficiency and throughput for artificial intelligence (AI) workloads. To reduce the number of conversions, recent designs use multibit compute cells. Nevertheless, practical multibit CiM still faces a tension among accuracy, efficiency, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 70 – 77
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3680497
Publisher: IEEE

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