Integrated Spatiotemporal Multiscale- Multiphysics-Uncertainty Simulation for Controlling Variability in RRAM Devices https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
Resistive random access memory (RRAM) is a leading candidate for next-generation nonvolatile memory and neuromorphic computing. However, its performance is limited by inherent switching variability and uncertainties in spatiotemporal multiscale materials and processes. This study integrates multiphysics and multiscale modeling with uncertainty quantification (UQ) to systematically address these limitations and …