Modulation

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A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication

A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication 150 150
Author(s): Lucrezia Navarin, Karl Norling, Marco Parenzan, Stefano Ruzzu, Andrea Neviani, Andrea Bevilacqua

Abstract:

A fully integrated galvanic isolator for gate drivers that supports high-speed, asynchronous, full-duplex communication is presented. Data transmission from the microcontroller to the power device is achieved using amplitude-shift keying (ASK) at 100 Mb/s, while simultaneous communication in the opposite direction is implemented using frequency-shift keying (FSK) at 167 Mb/s. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 289 – 292
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3611018
Publisher: IEEE

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SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation

SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation 150 150
Author(s): Jianqiang Jiang, Lei Zhao, Junyao Tang, Cheng Huang

Abstract:

This article introduces a small form-factor single-link multi-domain-output (SLiMDO) isolated dc–dc converter design. The proposed design provides two regulated outputs in separate domains in the receiver (Rx) side with a single micro-transformer. These isolated Rxes achieve local voltage regulation and automatic energy distribution across domains through passive magnetic flux …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606903
Publisher: IEEE

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A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation

A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation 150 150
Author(s): Jhuang-Wei Cyue, Tai-Haur Kuo

Abstract:

This article presents a digital-input class-D audio amplifier (CDA) that employs a double-sided voltage-boosting (DSVB) modulation scheme, integrating a capacitively coupled chopper amplifier (CCCA) with a single-inductor buck–boost power stage. The CCCA achieves a high dynamic range (DR) due to its very low noise floor and is implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602261
Publisher: IEEE

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A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS 150 150
Author(s): Edoardo Baiesi Fietta, David Seebacher, Davide Ponton, Andrea Bevilacqua

Abstract:

This letter presents a multiclass, asymmetric digital Doherty power amplifier (DDPA) for Bluetooth low energy (BLE) applications, that achieves high efficiency at full-scale as well as at 8.6-dB back-off using a single 0.7-V supply voltage. The proposed DDPA is made of two power-combined switched-capacitor power amplifiers (SCPAs) and uses an …

Published in: IEEE Solid-State Circuits Letters
Page(s): 217 – 220
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3591570
Publisher: IEEE

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Binarized Neural-Network Parallel-Processing Accelerator Macro Designed for an Energy Efficiency Higher Than 100 TOPS/W

Binarized Neural-Network Parallel-Processing Accelerator Macro Designed for an Energy Efficiency Higher Than 100 TOPS/W 150 150
Author(s): Yusaku Shiotsu, Satoshi Sugahara

Abstract:

A binarized neural-network (BNN) accelerator macro is developed based on a processing-in-memory (PIM) architecture having the ability of eight-parallel multiply-accumulate (MAC) processing. The parallel-processing PIM macro, referred to as a PPIM macro, is designed to perform the parallel processing with no use of multiport SRAM cells and to achieve the …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 25 – 33
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3538702
Publisher: IEEE

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