Modulation

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THz-TSI: A Terahertz Wireless Through-Silicon Interconnect Module for Advanced 3-D Integration Applications

THz-TSI: A Terahertz Wireless Through-Silicon Interconnect Module for Advanced 3-D Integration Applications 150 150
Author(s): Chen Jiang, Xiaodi Feng, Xiaohan Shen, Chixiao Chen, Qi Liu, Ming Liu, Ningsheng Xu

Abstract:

By vertically stacking device layers, advanced 3-D integration overcomes traditional planar scaling limits, delivering the bandwidth and power efficiency essential for modern artificial intelligence (AI) and high-performance computing (HPC) integrated systems. However, continued scaling of conventional through-silicon vias (TSVs) and microbumps presents critical bottlenecks due to inherent thermo-mechanical stress, complex …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3720291
Publisher: IEEE

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An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors

An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors 150 150
Author(s): Xinyi Wu, Chenxu Zhao, Hui Chen, Xun Bao, Yaolong Hu, Aoyang Zhang, Leibo Liu

Abstract:

This letter presents a compact, multiband reflection-type phase shifter (RTPS) implemented in 65-nm CMOS that overcomes the narrowband limitations of conventional passive loads. The proposed design utilizes an inductive-load modulation. By injecting a secondary signal to actively manipulate the magnetic flux, the equivalent inductance is boosted to enable operation across …

Published in: IEEE Solid-State Circuits Letters
Page(s): 170 – 173
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3694867
Publisher: IEEE

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A Single-Transducer Ultrasound System for Concurrent Power Harvesting and Adaptive Backscatter Communication in Bio-Implants

A Single-Transducer Ultrasound System for Concurrent Power Harvesting and Adaptive Backscatter Communication in Bio-Implants 150 150
Author(s): Conghao Gao, Weiran Chen, Zhenghao Li, Yiqing Lan, Chenyuan Zhang, Yida Li, Yipeng Lu, Longyang Lin, Jiamin Li

Abstract:

Bioelectronic implants have enabled precise and closed-loop interfacing with biological systems to diagnose, monitor, and treat disorders. A critical challenge for these chronically implanted systems is the design of a robust, real-time wireless data uplink and a continuous, efficient wireless power delivery link within a severely constrained form factor. Ultrasound, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3690876
Publisher: IEEE

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The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices 150 150
Author(s): Munazza Sayed, Hussam Amrouch

Abstract:

This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on drain current in the following defect-free and defective devices: 1) FDSOI with interface trap …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 113 – 119
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3686904
Publisher: IEEE

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A 19.4-fsRMS Jitter 0.1-to-44-GHz Cryo-CMOS Fractional-N CP-PLL Featuring Automatic Bleed Calibration for Quantum Computing

A 19.4-fsRMS Jitter 0.1-to-44-GHz Cryo-CMOS Fractional-N CP-PLL Featuring Automatic Bleed Calibration for Quantum Computing 150 150
Author(s): Jinhai Xiao, Yong Chen, Ningyi Zhang, Xiaolong Liu, Rui Liu, Junao Zhu, Chenghao Zhang, Peng Luo, Maliang Liu, Yintang Yang, Xiaohua Ma, Yue Hao

Abstract:

Cryogenic fractional- $N$ phase-locked loops (PLLs) are essential for large-scale superconducting quantum computing, and serve as integrated pump sources for Josephson parametric amplifiers. These PLLs enable high-fidelity qubit readout while reducing the thermal load and wiring complexity associated with room-temperature generators. However, the cryogenic pump sources developed thus far were …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 19
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3653994
Publisher: IEEE

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A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication

A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication 150 150
Author(s): Lucrezia Navarin, Karl Norling, Marco Parenzan, Stefano Ruzzu, Andrea Neviani, Andrea Bevilacqua

Abstract:

A fully integrated galvanic isolator for gate drivers that supports high-speed, asynchronous, full-duplex communication is presented. Data transmission from the microcontroller to the power device is achieved using amplitude-shift keying (ASK) at 100 Mb/s, while simultaneous communication in the opposite direction is implemented using frequency-shift keying (FSK) at 167 Mb/s. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 289 – 292
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3611018
Publisher: IEEE

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SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation

SLiMDO: A Single-Link Multi-Domain-Output Isolated DC–DC Converter With Passive Magnetic Flux Sharing for Local Energy Distribution and Rx Behavior Sensing-Based Global Power Modulation 150 150
Author(s): Jianqiang Jiang, Lei Zhao, Junyao Tang, Cheng Huang

Abstract:

This article introduces a small form-factor single-link multi-domain-output (SLiMDO) isolated dc–dc converter design. The proposed design provides two regulated outputs in separate domains in the receiver (Rx) side with a single micro-transformer. These isolated Rxes achieve local voltage regulation and automatic energy distribution across domains through passive magnetic flux …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606903
Publisher: IEEE

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A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation

A Low-EMI, High-DR Class-D Audio Amplifier With Double-Sided Voltage-Boosting Modulation 150 150
Author(s): Jhuang-Wei Cyue, Tai-Haur Kuo

Abstract:

This article presents a digital-input class-D audio amplifier (CDA) that employs a double-sided voltage-boosting (DSVB) modulation scheme, integrating a capacitively coupled chopper amplifier (CCCA) with a single-inductor buck–boost power stage. The CCCA achieves a high dynamic range (DR) due to its very low noise floor and is implemented with …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602261
Publisher: IEEE

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A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS

A 0.7-V Multiclass Digital Doherty Power Amplifier for BLE Applications With 41% Peak DE in 22-nm CMOS 150 150
Author(s): Edoardo Baiesi Fietta, David Seebacher, Davide Ponton, Andrea Bevilacqua

Abstract:

This letter presents a multiclass, asymmetric digital Doherty power amplifier (DDPA) for Bluetooth low energy (BLE) applications, that achieves high efficiency at full-scale as well as at 8.6-dB back-off using a single 0.7-V supply voltage. The proposed DDPA is made of two power-combined switched-capacitor power amplifiers (SCPAs) and uses an …

Published in: IEEE Solid-State Circuits Letters
Page(s): 217 – 220
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3591570
Publisher: IEEE

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