Magnetic tunneling

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A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time

A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time 150 150
Author(s): Haris Suhail, Haoran He, Vinod Kurian Jacob, Jiyue Yang, Kang L. Wang, Sudhakar Pamarti

Abstract:

Memory performance has emerged as a critical factor influencing both system speed and energy efficiency. However, conventional memory technologies such as embedded Flash (eFlash) and static RAM (SRAM) encounter significant scalability limitations beyond the 28-nm CMOS node. Among novel emerging memory technologies, spin-transfer-torque magnetic RAM (STT-MRAM) has gained prominence due …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3609342
Publisher: IEEE

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Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices

Reference-Load Sharing Scheme: An Area- and Energy-Efficient Nonvolatile Register Design Using MTJ Devices 150 150
Author(s): Masanori Natsui, Tomoo Yoshida, Takahiro Hanyu

Abstract:

This article proposes a circuit configuration for an area- and energy-efficient nonvolatile register using magnetic tunnel junction (MTJ) devices, suitable for persistent computation in intermittent computing environments. The proposed configuration, named the reference-load sharing scheme (RLSS), stores 1 bit of information using the resistance of a dedicated MTJ device and a …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 90 – 98
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3611365
Publisher: IEEE

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