Magnetic Tunnel Junction (MTJ)

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Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference

Sensing- and Periphery-Aware Modeling of a Hybrid MTJ–CMOS Nonvolatile One-Bit Sign-Weight Memory Subsystem for Energy-Constrained Edge Inference 150 150
Author(s): Byeong-Gwon Kim, Byeong-Kwon Ju, Ki-Young Lee

Abstract:

Spin-transfer-torque magnetic random-access memory (STT-MRAM) is attractive for nonvolatile one-bit sign-weight storage, but a favorable cell or local-read metric does not establish subsystem efficiency. We analyze a hybrid magnetic tunnel junction (MTJ)–complementary metal-oxide-semiconductor (CMOS) memory subsystem in which MTJs store static signs while sensing, reference generation, sign staging, scale …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3726699
Publisher: IEEE

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Design and Analysis of a Three-Stream STT-MTJ TRNG With XOR and Majority Voter Logic as Postprocessing Architectures

Design and Analysis of a Three-Stream STT-MTJ TRNG With XOR and Majority Voter Logic as Postprocessing Architectures 150 150
Author(s): M. Satwik Rai, Akshaja Kanugovi, Vinod Kumar Joshi

Abstract:

True random number generators (TRNGs) are critical for hardware security, providing unpredictable entropy for cryptographic applications. Spin-transfer torque magnetic tunnel junction (STT-MTJ) devices offer a promising entropy source due to their low-power consumption, nonvolatility, and stochastic switching behavior. This work presents an MTJ-based TRNG that produces three independent bit streams. …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 36 – 44
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3671608
Publisher: IEEE

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