A High-Density Low-Leakage and Low-Power Fully Voltage-Stacked SRAM for IoT Application https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
The general approach to suppress leakage in static random access memory (SRAM) is to use a low voltage ( $V_{text {L}}$ ), generated by a low-dropout regulator (LDO), as the cell supply voltage (CVDD) of SRAM array in the standby mode. However, the effectiveness of lowering CVDD is constrained by the …