Logic

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A Practical MRAM Logic-in-Memory Platform With Reference-Bitline Structure

A Practical MRAM Logic-in-Memory Platform With Reference-Bitline Structure 150 150
Author(s): Seongmin Ahn, Minjun Jang, Mingu Han, Bayartulga Ishdorj, Siyeol Lee, Taehui Na

Abstract:

The memory wall due to data movement is a major challenge that limits performance and energy efficiency in bitwise-operation-intensive applications. To address this issue, this article proposes a global merged reference-based magnetic random access memory (MRAM) logic-in-memory (LIM) structure. The proposed structure generates operation-specific reference resistances by controlling the effective …

Published in: IEEE Solid-State Circuits Letters
Page(s): 266 – 269
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3729230
Publisher: IEEE

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A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction

A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction 150 150
Author(s): Supriyo Bandyopadhyay

Abstract:

The xor Boolean logic gate is widely used in many applications such as encryption (xor ciphers), binary addition (half- and full-adders), error detection (parity bits), etc., but is challenging to construct because of its demanding conditional dynamics. It typically requires multiple logic switches or other types of gates, which results …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 185 – 191
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3719208
Publisher: IEEE

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A3D-MoE: Acceleration of Large Language Models With Mixture of Experts via 3-D Heterogeneous Integration

A3D-MoE: Acceleration of Large Language Models With Mixture of Experts via 3-D Heterogeneous Integration 150 150
Author(s): Wei-Hsing Huang, Janak Sharda, Cheng-Jhih Shih, Yuyao Kong, Faaiq Waqar, Pin-Jun Chen, Yingyan Lin, Shimeng Yu

Abstract:

Conventional large language models (LLMs) have large parameter sets, making inference costly and energy-intensive; mixture-of-experts (MoEs) mitigates this by activating fewer weights per token, but fine-grained MoE LLMs still face runtime workload variability, inefficient conventional scheduling, and high bandwidth memory (HBM) loading energy/bandwidth demands. A3D-MoE addresses these with 3…

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 176 – 184
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3713957
Publisher: IEEE

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Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM

Open DRAM Model—Part II: Enabling Processing-in-Memory in 3-D DRAM 150 150
Author(s): Kiseok Lee, Seongkwang Lim, Suman Datta, Shimeng Yu

Abstract:

Processing-in-memory (PIM) by implementing Boolean logic functions in dynamic random access memory (DRAM) has been proposed to alleviate the memory wall problem in data-intensive computing. However, quantitatively evaluating DRAM-based logic operations across different DRAM architectures remains challenging due to the lack of publicly available DRAM cell and peripheral transistor models …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 144 – 152
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704508
Publisher: IEEE

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CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance

CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance 150 150
Author(s): Jincheng Wang, Yuxin Zhou, Bin Ning, Lintao Lan, Yifei Li, Xufeng Kou, Yuhao Shu, Yajun Ha

Abstract:

Cryogenic approximate content-addressable memory (ACAM) offers an appealing solution that allows mismatches between the query and the stored data, measured by the Hamming distance (HD). However, in ACAM designs, increasing the word length shrinks the matchline (ML) voltage spacing between adjacent HD tolerance levels, thereby limiting the tunable-HD tolerance range …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3722705
Publisher: IEEE

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A 3-nm FinFET 563-kbit 35.5-Mbit/mm2 Dual-Rail SRAM With 3.89-pJ/Access High Energy Efficient and 27.5-μW/Mbit One-Cycle Latency Low-Leakage Mode

A 3-nm FinFET 563-kbit 35.5-Mbit/mm2 Dual-Rail SRAM With 3.89-pJ/Access High Energy Efficient and 27.5-μW/Mbit One-Cycle Latency Low-Leakage Mode 150 150
Author(s): Yumito Aoyagi, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Kazuto Mizutani, Masaya Hamada, Yuichiro Ishii, Yen Chi Chou, Jun Cheng Liu, Chien-Yu Huang, Kang-Hui Peng, Yu-Hao Hsu, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents a high-density (HD) 6T SRAM macro designed in 3-nm FinFET technology with an extended dual-rail (XDR) architecture, addressing active energy and leakage for mobile applications. Two key innovations are introduced: the delayed-wordline in write operation (DEWL) technique and a one-cycle latency low-leakage access mode (1-CLM). The XDR …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1466 – 1476
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3639747
Publisher: IEEE

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A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic

A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic 150 150
Author(s): Guo Wei, Rui Zhang, Fule Li, Hanjun Jiang, Zhihua Wang

Abstract:

This letter presents a 12-bit, 180-MS/s pipelined-SAR ADC in 65-nm CMOS. To eliminate the complex interstage gain-error calibration for a fast-response characteristic, a high-gain residue amplifier (RA) featuring a two-stage gain-boosting architecture is proposed. By removing the tail current, the RA significantly alleviates slew-rate and voltage headroom limitations. The …

Published in: IEEE Solid-State Circuits Letters
Page(s): 186 – 189
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697220
Publisher: IEEE

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Building Minimum-Power Digital Circuits With Sub-Femtowatt Dynamic Leakage-Suppression Logic Standard Cells

Building Minimum-Power Digital Circuits With Sub-Femtowatt Dynamic Leakage-Suppression Logic Standard Cells 150 150
Author(s): Daniel S. Truesdell, Jacob Breiholz, Benton H. Calhoun

Abstract:

This article investigates dynamic leakage-suppression (DLS) logic for minimum-power operation in digital circuits. The DLS logic family uses a strong intrinsic subthreshold leakage reduction technique and is an emerging approach for computing applications that prioritize low active power at or beneath the nW-level. We analytically model the key operating characteristics …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3709741
Publisher: IEEE

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A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology

A 1.1-nJ/Conversion RC-Discharge-Based Resistance Sensor With ±0.65% (3σ) 1 -Point Trimmed Inaccuracy in 0.18-μm CMOS Technology 150 150
Author(s): Mu Wu, Yihang Cheng, Xingli Cui, Sining Pan, Huaqiang Wu

Abstract:

This letter presents an energy-efficient RC discharge-based sensor readout circuit for sub-kilo-ohm resistance measurements. An SAR logic is implemented to adjust the DAC capacitor array to equalize the RC time constants of the resistance-sensing and DAC branches, thereby eliminating the high static current required to bias the small sensing resistor. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 109 – 112
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3677301
Publisher: IEEE

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