logic-in-memory (LIM)

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A Practical MRAM Logic-in-Memory Platform with Reference-Bitline Structure

A Practical MRAM Logic-in-Memory Platform with Reference-Bitline Structure 150 150
Author(s): Seongmin Ahn, Minjun Jang, Mingu Han, Bayartulga Ishdorj, Siyeol Lee, Taehui Na

Abstract:

The memory wall due to data movement is a major challenge that limits performance and energy efficiency in bitwise-operation-intensive applications. To address this issue, this paper proposes a global merged reference-based magnetic random-access memory (MRAM) logic-in-memory structure. The proposed structure generates operation-specific reference resistances by controlling the effective parallelism of …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3729230
Publisher: IEEE

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CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance

CTH-CAM: A Cryogenic eDRAM-Based CAM With 1–26 Tunable Hamming Distance 150 150
Author(s): Jincheng Wang, Yuxin Zhou, Bin Ning, Lintao Lan, Yifei Li, Xufeng Kou, Yuhao Shu, Yajun Ha

Abstract:

Cryogenic approximate content-addressable memory (ACAM) offers an appealing solution that allows mismatches between the query and the stored data, measured by the Hamming distance (HD). However, in ACAM designs, increasing the word length shrinks the matchline (ML) voltage spacing between adjacent HD tolerance levels, thereby limiting the tunable-HD tolerance range …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3722705
Publisher: IEEE

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