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A Broadband Class-E Power Amplifier With Compact Harmonic Suppression Susceptance Compensation Load Network in 110-nm CMOS

A Broadband Class-E Power Amplifier With Compact Harmonic Suppression Susceptance Compensation Load Network in 110-nm CMOS 150 150
Author(s): Kai Yue, Yubing Li, Yujia Chen, Xiuping Li

Abstract:

This letter presents a compact Class-E power amplifier (PA) with broadband and enhanced harmonic suppression performance. The harmonic suppression susceptance compensation (HSSC) Class-E load network is proposed and analyzed to simultaneously achieve broadband fundamental matching and harmonic suppression. Despite its sixth-order $LC$ complexity, the proposed HSSC Class-E load network is …

Published in: IEEE Solid-State Circuits Letters
Page(s): 254 – 257
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725042
Publisher: IEEE

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A CMOS LNA With an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications

A CMOS LNA With an Integrated Direct-Conversion Mixer-Based Power Detector for Low-Power IoT Radio Applications 150 150
Author(s): Yunfan Gao, Minghan Liu, Mengting Yan, Cristian Cassella, Miriam Leeser, Marvin Onabajo

Abstract:

This letter presents a 2.8-GHz low-power CMOS low-noise amplifier (LNA) with an embedded self-mixing power detector (PD) for low-overhead RF power monitoring. The detector reuses two existing LNA node voltages as the signal and local oscillator (LO) inputs for direct downconversion mixing, which avoids a dedicated LO generator, coupler, or …

Published in: IEEE Solid-State Circuits Letters
Page(s): 258 – 261
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3725828
Publisher: IEEE

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One-Cycle-Balance Control in Buck Converters for Consecutive Load-Step Events

One-Cycle-Balance Control in Buck Converters for Consecutive Load-Step Events 150 150
Author(s): Zihao Tang, Jiacheng Yang, Rui P. Martins, Mo Huang

Abstract:

One-cycle-balance (OCB) response represents the optimal load-transient response for buck converters, maximizing system energy efficiency and robustness. While prior art has demonstrated OCB response for single load-step events, it fails in consecutive transients, which are prevalent in modern applications. This work overcomes these limitations by introducing an OCB controller that …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 4975 – 4986
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3697453
Publisher: IEEE

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A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI

A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI 150 150
Author(s): Haisu Ju, Yingtao Zou, Gabriel M. Rebeiz

Abstract:

This article presents a 6.3–18.4 GHz in-phase and quadrature (I/Q) direct down-conversion receiver featuring reconfigurability in both the radio frequency (RF) and local oscillator (LO) paths. The receiver comprises a multi-band reconfigurable RF front-end, double-balanced passive I/Q mixers, an I/Q LO generation network with a tunable I/Q …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 4558 – 4571
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698025
Publisher: IEEE

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A 40-Gb/s 8-mW-OMA GaN-Based 1-to-N VCSEL Driver for Parallel and Wireless Optical Transmitter Frontends

A 40-Gb/s 8-mW-OMA GaN-Based 1-to-N VCSEL Driver for Parallel and Wireless Optical Transmitter Frontends 150 150
Author(s): S. Sarah Feng, Fuzhan Chen, H. Bruce Bao, R. Matthew Ma, Kangping Zhong, P. T. Alan Lau, C. Patrick Yue

Abstract:

This letter presents a broadband, high-optical modulation amplitude (OMA) GaN-based 1-to-N VCSEL driver implemented in a 150-nm GaN HEMT process for parallel and wireless optical transmitter frontends. It further compares split-node and conventional VCSEL-driving topologies and analyzes the bandwidth scaling and inter-VCSEL timing skew of series- and parallel-connected VCSEL arrays. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 242 – 245
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3720689
Publisher: IEEE

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A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications

A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications 150 150
Author(s): Maysara Hamada, Mostafa Toubar, Zixu Wang, Nishant Bakshi, Hsiang-Chun Cheng, Mayank Palaria, Joshua Yang, Mike Shuo-Wei Chen

Abstract:

As crossbar-based analog computing grows in popularity for high-speed, energy-efficient processing, the need to drive discrete-time signals to heavy loads arises. This letter presents a novel bi-slewing CMOS driver utilizing high slew-rate error amplifiers and a push–pull stage. The proposed driver achieves a measured settling time of 8.5 ns and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 218 – 221
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3717852
Publisher: IEEE

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A 0.73 A/mm3 Switched-Capacitor-Stack-Inductor Volumetric Integrated Voltage Regulator With Auxiliary-Assisted Gain Boosting for High-Power-Density PoL Applications

A 0.73 A/mm3 Switched-Capacitor-Stack-Inductor Volumetric Integrated Voltage Regulator With Auxiliary-Assisted Gain Boosting for High-Power-Density PoL Applications 150 150
Author(s): Xuliang Wang, Renwei Chen, Haoyu Wang, Yang Liu, Wing-Hung Ki, Yan Wang, Xiaosen Liu

Abstract:

This article presents a volumetric integrated voltage regulator (IVR) based on a switched-capacitor-stack-inductor (SCSL) architecture that employs a holistic topology-control-package codesign to overcome the hardware and efficiency bottlenecks of conventional asymmetric multiinductor designs. Based on a discrete-time state-space model, a rigorous root-locus analysis reveals that a rudimentary single voltage-mode control …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3713507
Publisher: IEEE

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An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors

An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors 150 150
Author(s): Xinyi Wu, Chenxu Zhao, Hui Chen, Xun Bao, Yaolong Hu, Aoyang Zhang, Leibo Liu

Abstract:

This letter presents a compact, multiband reflection-type phase shifter (RTPS) implemented in 65-nm CMOS that overcomes the narrowband limitations of conventional passive loads. The proposed design utilizes an inductive-load modulation. By injecting a secondary signal to actively manipulate the magnetic flux, the equivalent inductance is boosted to enable operation across …

Published in: IEEE Solid-State Circuits Letters
Page(s): 170 – 173
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3694867
Publisher: IEEE

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A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation

A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation 150 150
Author(s): Yu-Ting Huang, Xiao-Quan Wu, Chi-Yu Chen, Po-Jui Chiu, Chien-Wei Cho, Tz-Wun Wang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Sheng-Hsi Hung, Chih-Fang Huang, Philex Ming-Yan Fan, Tsorng-Juu Liang, Hann-Huei Tsai

Abstract:

The proposed capacitor-free hybrid-process low-dropout regulator (LDO) achieves 900-mA maximum current capacity and 99.99% peak current efficiency with 90 $\mu $ A quiescent current. By combining GaN and silicon processes, the proposed Ultrahigh gain amplifier (UHGA) enables a high loop gain to achieve 0.297-mV/A load regulation and 0.024-mV/V line regulation. Furthermore, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3702962
Publisher: IEEE

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