Joining processes

A 58.9—73.7-GHz Quadrature Dual-Core Class-F3,5 Oscillator with Tail-Assisted Implicit Quintupling

A 58.9—73.7-GHz Quadrature Dual-Core Class-F3,5 Oscillator with Tail-Assisted Implicit Quintupling 150 150

Abstract:

We introduce a new class-F3,5 oscillator topology that enables quadrature operation by duplicating a conventional class-F3 oscillator core and electro-magnetically coupling the two cores through a pair of additional coils feeding source terminals of the gm transistors. The coupling network enhances the 5th-harmonic component, enabling efficient extraction and quadrature operation …

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Open DRAM Model Part I: Cross-Layer Device, Array, and Circuit Analysis with BL-to-BL Coupling Mitigation for 4F² VCT DRAM

Open DRAM Model Part I: Cross-Layer Device, Array, and Circuit Analysis with BL-to-BL Coupling Mitigation for 4F² VCT DRAM 150 150

Abstract:

DRAM scaling toward 4F² vertical channel transistors (VCT) fundamentally reshapes device, array, and circuit-level design trade-offs. However, the lack of open-source DRAM device model that is calibrated with recent industry trends prohibits broader innovations in the research community. In this work, we present an “Open DRAM Model” and showcase its …

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A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS

A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS 150 150

Abstract:

This article presents a D-band 2-D scalable phased array that integrates a $2{\,}\times{\,} 2$ transceiving (TRX) radio frequency (RF) beamformer with on-chip antennas (OCAs) and a $\times 16$ local-oscillator (LO) multiplication chain. The 2-D array scalability is demonstrated by tiling $2{\,}\times{\,} 2$ chips into an array using a low-cost package to build a 16…

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A 60-GHz Class- F2,3 Standing-Wave Oscillator Employing Triple-Line Resonator Achieving −189-dBc/Hz FoM in 65-nm CMOS

A 60-GHz Class- F2,3 Standing-Wave Oscillator Employing Triple-Line Resonator Achieving −189-dBc/Hz FoM in 65-nm CMOS 150 150

Abstract:

Implementing oscillators with harmonic engineering beyond 60-GHz poses significant challenges due to the need for small inductors resonating beyond 120 GHz. To address this issue, this work presents a 60-GHz standing-wave oscillator (SWO) with both second- and third-harmonic boosting for phase noise reduction. A triple-line resonator is proposed to sustain both …

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