Integrated circuit technology

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The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices 150 150
Author(s): Munazza Sayed, Hussam Amrouch

Abstract:

This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on drain current in the following defect-free and defective devices: 1) FDSOI with interface trap …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 113 – 119
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3686904
Publisher: IEEE

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A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture

A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture 150 150
Author(s): Prashanth Barla, Ramya Moodakare

Abstract:

Hybrid computation-in-memory (CIM) architecture has emerged as the most promising alternative to overcome the drawbacks of the conventional CMOS-only devices used in the conventional von-Neumann architecture. In the hybrid CIM architecture, a pair of perpendicular magnetic tunnel junctions (pMTJs) is used to store one bit of information. Though there are …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 65 – 69
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3679830
Publisher: IEEE

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