Abstract:
This article reports a high-density 3T1C single-finger (SF) embedded dynamic random access memory (eDRAM) compute-in-memory (CIM) macro. It features several techniques that enhance the memory density, the energy efficiency, and the throughput density, namely: 1) a high-density 3T1C SF-eDRAM cell with low-leakage retention (LLR) to improve the memory density …