Impedance matching

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A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination

A 2–18 GHz High-Efficiency CMOS Nonuniform Distributed Power Amplifier With a Novel Reconfigurable Inductive Termination 150 150
Author(s): Bo Pang, Fei You, Taotao Pang, Rongxing Qin, Zehua Xiao, Yingjie Liu, Yingyu Liu, Xinyu Wang, Junfu Guo, Songbai He

Abstract:

This article presents a 2–18 GHz high-efficiency CMOS nonuniform distributed power amplifier (NDPA) with a novel reconfigurable inductive termination technique for ultra-broadband efficiency enhancement. First, the inherent drawback of the degrading efficiency with growing frequency in a conventional non-reconfigurable NDPA architecture with multi-octave bandwidth is studied. A simple and effective reconfigurable …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665920
Publisher: IEEE

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A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications

A Compact Reconfigurable Dual-Path Dual-Band LNA for 5G NR FR2 Applications 150 150
Author(s): Pei Qin, Junyu Wu, Taotao Xu, Yongchun Li, Wenjie Feng, Quan Xue, Wenquan Che

Abstract:

This article presents a reconfigurable dual-path dual-band low noise amplifier (LNA) for fifth generation (5G) millimeter-wave (mmW) communications. A novel band-switching input matching architecture based on the cross-connected transistors is proposed to achieve optimal dual-band input matching and $g_{m}$ -boosting. This architecture allows the dual-band input transistors to share …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3661593
Publisher: IEEE

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A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification

A “No Gain” Direct-Conversion IQ RF-to-Bits Receiver Without Active Linear Amplification 150 150
Author(s): Jeroen Ponte, Roel Plompen, Emiel Zijlma, Eric A. M. Klumperink, Harijot Singh Bindra, Bram Nauta

Abstract:

This work describes a direct-conversion IQ receiver (RX) that does not utilize any active linear (power) amplification, covering its design considerations, prototype implementation, and measurement verification. Only RLC components, MOS transistor (MOST) switches, and comparators are used, leading to several unique design challenges. Key among these are the fact that …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 17
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3611114
Publisher: IEEE

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A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS

A Compact Current-Reusing 6-mW 66–92 GHz Frequency Quadrupler With 5% Peak Power Added Efficiency and >36 dBc Harmonic Rejection in 22-nm FDSOI CMOS 150 150
Author(s): Shankkar Balasubramanian, Kristof Vaesen, Piet Wambacq, Carsten Wulff

Abstract:

This letter presents a frequency quadrupler with 32% fractional bandwidth (66–92 GHz) and 5% peak power-added efficiency (PAE), capable of operating with an input power of 0 dBm. The quadrupler consisting of two cascaded frequency doublers uses a multiport driven push-push complementary architecture for the first stage to generate differential signals for the second …

Published in: IEEE Solid-State Circuits Letters
Page(s): 301 – 304
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3614381
Publisher: IEEE

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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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