high-speed

  • No Comments

A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications

A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications 150 150
Author(s): Min-Woong Seo, Yong-Suk Choi, Sanggwon Lee, Yeongseok Shim, Gihwan Cho, Daehee Bae, Masamichi Ito, Jaehun Jeong, Hiroyuki Sugihara, Si-Gyoung Koo, Sung-Jae Byun, Hyukbin Kwon, Youna Lee, Bumjun Kim, Su-Hyun Han, Suksan Kim, Wonoh Ryu, Kwan-Sik Kim, Yongjun Kim, Seung-Sik Kim, Junghoon Jung, Sun-Young Yoo, Jinkyeong Heo, Seung-Chul Shin, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song

Abstract:

This article presents a 3-Mpixel (Mp) three-stacked digital pixel sensor (DPS) featuring the world’s smallest pixel pitch of $2.988~\mu $ m, achieving a low temporal random noise (RN) of 1.16 e-rms and a high dynamic range (HDR) of 123 dB in global-shutter (GS) operation mode for versatile applications. To realize both the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1319 – 1332
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663214
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs

A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs 150 150
Author(s): Sang-Soo Park, Jae-Doeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chung-Ho Yu, Hirano Makoto, Yongseok Kwon, Jong-Hoon Park, Ho-Joon Kim, Daein Lee, Donghyun Seo, Philkyu Kang, Byungrok Go, Minseok Kim, Seoyoon Jeon, Jaehwan Ryu, Jungmin Seo, Hwan-Seok Ku, Youngmin Jo, Doo-Hyun Kim, Hyunjun Yoon, Wontae Kim, Inmo Kim, Sunghoon Kim, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Youngdon Choi, Il-Han Park, Chiweon Yoon, Hyunsuk Kim, Jaehoon Jang, Seungjae Lee, Ki-Whan Song, Sung-Hoi Hur

Abstract:

The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 9
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3613774
Publisher: IEEE

View on IEEE Xplore

Search this website