Generative adversarial networks

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Physics-Guided Active Learning and Geometry-Aware Electrothermal Screening of Semiconductor Devices: A GaN Case Study

Physics-Guided Active Learning and Geometry-Aware Electrothermal Screening of Semiconductor Devices: A GaN Case Study 150 150
Author(s): Ayoub Sadeghi, Leonid Popryho, Inna Partin-Vaisband

Abstract:

Exploring high-dimensional semiconductor device design spaces under coupled electrothermal constraints remains challenging, particularly in 3-D heterogeneous systems with tightly coupled electrical, thermal, and integration requirements. Conventional TCAD-driven exploration is physically accurate but computationally expensive and offers limited insight into governing parameters. This work presents physics-guided active learning trigate optimization (PALTO), …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 231 – 239
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3736280
Publisher: IEEE

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A 40-Gb/s 8-mW-OMA GaN-Based 1-to-N VCSEL Driver for Parallel and Wireless Optical Transmitter Frontends

A 40-Gb/s 8-mW-OMA GaN-Based 1-to-N VCSEL Driver for Parallel and Wireless Optical Transmitter Frontends 150 150
Author(s): S. Sarah Feng, Fuzhan Chen, H. Bruce Bao, R. Matthew Ma, Kangping Zhong, P. T. Alan Lau, C. Patrick Yue

Abstract:

This letter presents a broadband, high-optical modulation amplitude (OMA) GaN-based 1-to-N VCSEL driver implemented in a 150-nm GaN HEMT process for parallel and wireless optical transmitter frontends. It further compares split-node and conventional VCSEL-driving topologies and analyzes the bandwidth scaling and inter-VCSEL timing skew of series- and parallel-connected VCSEL arrays. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 242 – 245
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3720689
Publisher: IEEE

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A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation

A Capacitor-Free Hybrid-Process Low Dropout Regulator With Ultrahigh-Gain Amplifier and Super Source Follower for 0.297 mV/A Load Regulation and 0.024 mV/V Line Regulation 150 150
Author(s): Yu-Ting Huang, Xiao-Quan Wu, Chi-Yu Chen, Po-Jui Chiu, Chien-Wei Cho, Tz-Wun Wang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai, Sheng-Hsi Hung, Chih-Fang Huang, Philex Ming-Yan Fan, Tsorng-Juu Liang, Hann-Huei Tsai

Abstract:

The proposed capacitor-free hybrid-process low-dropout regulator (LDO) achieves 900-mA maximum current capacity and 99.99% peak current efficiency with 90 $\mu $ A quiescent current. By combining GaN and silicon processes, the proposed Ultrahigh gain amplifier (UHGA) enables a high loop gain to achieve 0.297-mV/A load regulation and 0.024-mV/V line regulation. Furthermore, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3702962
Publisher: IEEE

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