Physics-Guided Active Learning and Geometry-Aware Electrothermal Screening of Semiconductor Devices: A GaN Case Study https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
Exploring high-dimensional semiconductor device design spaces under coupled electrothermal constraints remains challenging, particularly in 3-D heterogeneous systems with tightly coupled electrical, thermal, and integration requirements. Conventional TCAD-driven exploration is physically accurate but computationally expensive and offers limited insight into governing parameters. This work presents physics-guided active learning trigate optimization (PALTO), …