GaAs

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An Extendable Wideband Band-Divided SPnT Switch Topology Based on a Reconfigurable Pole-to-Throw Network

An Extendable Wideband Band-Divided SPnT Switch Topology Based on a Reconfigurable Pole-to-Throw Network 150 150
Author(s): Zhaowu Wang, Hao Ning, Xinyan Li, Ze Yu, Qiliang Li, Xiaochen Tang, Yong Wang

Abstract:

This article presents an extendable wideband band-divided SP $n$ T switch topology based on a reconfigurable pole-to-throw network (RPTN). Compared to conventions, it mitigates the loss degradation resulting from complex signal routing in advanced RF front-ends. This is enabled by the RPTN, which divides the throws into low-/mid-/high-band (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3711644
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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