Frequency modulation

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A Multichannel Injection-Locked OOK Transmitter With Current Mode Edge-Combining Power Amplifier
A Multichannel Injection-Locked OOK Transmitter With Current Mode Edge-Combining Power Amplifier 150 150
Author(s): Sheng-Kai Chang, Zhi-Wei Lin, Kuang-Wei Cheng

Abstract:

This letter introduces an ultralow-power ON–OFF keying (OOK) wireless transmitter incorporating innovative multiphase injection locking and frequency multiplication techniques. The transmitter leverages a current mode class-D edge-combining power amplifier, ensuring high-energy efficiency in frequency multiplication to generate the carrier frequency. With a primary focus on facilitating multichannel support for …

Published in: IEEE Solid-State Circuits Letters
Page(s): 111 – 114
Year of Publication: 2024
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2024.3375329
Publisher: IEEE

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A 72-Channel Resistive-and-Capacitive Sensor-Interface Chip With Noise-Orthogonalizing and Pad-Sharing Techniques
A 72-Channel Resistive-and-Capacitive Sensor-Interface Chip With Noise-Orthogonalizing and Pad-Sharing Techniques 150 150
Author(s): Xiangdong Feng, Yuxuan Luo, Tianyi Cai, Yangfan Xuan, Yunshan Zhang, Yili Shen, Changgui Yang, Qijing Xiao, Sijun Du, Bo Zhao

Abstract:

The growing trend of the Internet of Things (IoT) involves trillions of sensors in various applications. An extensive array of parameters need to be gathered concurrently with high-precision, low-cost, and low-power sensor nodes, such as resistive (R) and capacitive (C) sensors. Single-chip channel fusion can be an effective solution, while …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 702 – 715
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2023.3344587
Publisher: IEEE

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Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories
Impact of Technology Scaling and Back-End-of-the-Line Technology Solutions on Magnetic Random-Access Memories 150 150
Author(s): Piyush Kumar, Da Eun Shim, Siri Narla, Azad Naeemi

Abstract:

While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scaling MRAM devices is caused by the ever-increasing resistances of interconnects. In this article, we …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 13 – 21
Year of Publication: 2024
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2024.3357625
Publisher: IEEE

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