Frequency measurement

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

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BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator

BASS-PLL: A Bandwidth Augmented Sub-Sampling PLL Achieving a Wide Bandwidth Above 30% of the Reference Frequency and a Worst Case FoMREF of −247.9 dB at 3 GHz With a Ring Oscillator 150 150
Author(s): Tong Zhang, Yiwen Zhang, Xueke Cai, Weihao Jie, Yanling Zheng, Deyong Li, Yang Zhao, Yongfu Li, Honglan Jiang, Patrick P. Mercier, Hui Wang

Abstract:

This work presents a bandwidth augmented sub-sampling phase-locked loop (BASS-PLL) architecture that features simultaneous out-of-band noise suppression by direct and multipath sampling of the ring oscillator’s (ROs) output and in-band noise suppression via an intrinsic sub-sampling mechanism, ultimately combining the benefits of over-sampling PLLs (OS-PLLs) and sub-sampling PLLs (SS-PLLs) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3640726
Publisher: IEEE

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A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil

A High-Speed D-FF and a 11-Bit Up-Down Counter Using Unipolar Oxide TFTs on a Flexible Foil 150 150
Author(s): Suyash Shrivastava, Pydi Ganga Bahubalindruni

Abstract:

This manuscript presents an experimental characterization of a novel high speed D flip-flop (D-FF). The circuit was fabricated on a $27\mu $ m thick flexible polyimide substrate using a nMOS only, single gate amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) technology. Reliable response of the D-FF was noticed from measurements up to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 373 – 376
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3636192
Publisher: IEEE

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A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management

A Compact, Highly-Digital Sensor-Fusion-Based Joint V dd-Temperature Sensor for SoC Thermal Management 150 150
Author(s): Hikmet Seha Öztürk, Julian Arenas, Carlos Tokunaga, Nasser Kurd, Visvesh S. Sathe

Abstract:

This article presents a fine-grained thermal sensing network for thermal management in SoCs. Sensor nodes in this network are made up of joint supply voltage ( $V_{\mathrm {dd}}$ ) and temperature ( $T$ ) sensors, which are compact and highly digital. Measurements from these simple but imperfect sensors are jointly processed to extract …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3621280
Publisher: IEEE

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A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology 150 150
Author(s): Ethan Chou, Hesham Beshary, Nima Baniasadi, Ali M. Niknejad

Abstract:

This letter presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16 nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 349 – 352
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626442
Publisher: IEEE

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An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration

An 8-Bit 400-MS/s 1-Then-2-Bit/Cycle SAR ADC With Comparator Rotation-Based Input-Independent Background Offset Calibration 150 150
Author(s): Changjoo Kim, Sooho Park, Yohan Choi, Minkyun Shim, Woojin Lee, Donghwi Seo, Chulwoo Kim

Abstract:

This letter presents an 8-bit 400 MS/s 1-then-2-bit/cycle successive approximation register (SAR) analog-to-digital converter (ADC) employing a comparator rotation-based background offset calibration (CRBC) technique. Unlike conventional 1-then-2-bit/cycle architectures, where calibration validity depends on the input voltage, the proposed comparator rotation-based background calibration enables input-independent background calibration, …

Published in: IEEE Solid-State Circuits Letters
Page(s): 345 – 348
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3624263
Publisher: IEEE

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