Fluctuations

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A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load

A Hybrid Touch Sensing AFE With Common-CVQ (Currents, Voltages, and Charges) Subtraction to Improve Display Noise Immunity for Large Sensing Load 150 150
Author(s): Seung Hun Choi, Jun Yeol An, Jaewoong Ahn, Si-Woo Kim, Jae-Youl Lee, Yoon-Kyung Choi, Hyung-Min Lee

Abstract:

On-cell touch flexible organic light-emitting diode (OLED) displays face significant display noise (D-noise) challenges due to large parasitic capacitance ( $C_{P}$ ). To address the limitations of conventional methods, this article proposes improved common-current subtraction (CCS), incorporating common-voltage subtraction (CVS) and common-charge subtraction (CQS) techniques. CVS enhances signal-to-noise ratio (SNR) by …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3675678
Publisher: IEEE

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A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications

A 1.16 e-rms Temporal Random Noise, 123-dB High Dynamic Range, 2.988-μm Pitch 3-Mpixel Three-Stacked Digital Pixel Sensor for Versatile Applications 150 150
Author(s): Min-Woong Seo, Yong-Suk Choi, Sanggwon Lee, Yeongseok Shim, Gihwan Cho, Daehee Bae, Masamichi Ito, Jaehun Jeong, Hiroyuki Sugihara, Si-Gyoung Koo, Sung-Jae Byun, Hyukbin Kwon, Youna Lee, Bumjun Kim, Su-Hyun Han, Suksan Kim, Wonoh Ryu, Kwan-Sik Kim, Yongjun Kim, Seung-Sik Kim, Junghoon Jung, Sun-Young Yoo, Jinkyeong Heo, Seung-Chul Shin, Heesung Shim, Jae-Kyu Lee, Jonghyun Go, Jaihyuk Song

Abstract:

This article presents a 3-Mpixel (Mp) three-stacked digital pixel sensor (DPS) featuring the world’s smallest pixel pitch of $2.988~\mu $ m, achieving a low temporal random noise (RN) of 1.16 e-rms and a high dynamic range (HDR) of 123 dB in global-shutter (GS) operation mode for versatile applications. To realize both the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1319 – 1332
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663214
Publisher: IEEE

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A Pseudo-Series Resonance CMOS Oscillator

A Pseudo-Series Resonance CMOS Oscillator 150 150
Author(s): Jiawen Chen, Kai Xu, Teerachot Siriburanon, Robert Bogdan Staszewski

Abstract:

This article presents a single-core, low-phase-noise (PN) digitally controlled oscillator (DCO) employing a pseudo-series resonance (pseudo-SR) technique with a transformer-based resonator. The proposed pseudo-SR resonator offers two key advantages: 1) a low impedance with a 180° phase shift at the impedance pole, emulating series resonance (SR) to enable single-stage oscillation and reduce …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3663515
Publisher: IEEE

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Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors 150 150
Author(s): Wei Zhang, Jianze Wang, Xuanyao Fong

Abstract:

We utilized phase-field simulations to investigate the effects of polar-axis (PA) orientation fluctuations on the extrinsic properties of single ferroelectric (FE) grains, focusing on the coercive electrical field (EC) and the remnant polarization (Pr). The underlying mechanisms through which PA orientation fluctuations influence polarization behavior are studied to gain insights …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 74 – 80
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3586589
Publisher: IEEE

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