FinFETs

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A 50-Gb/s Multicarrier Transmitter Using DAC-Based Polar Drivers in 22-nm FinFET

A 50-Gb/s Multicarrier Transmitter Using DAC-Based Polar Drivers in 22-nm FinFET 150 150
Author(s): Il-Min Yi, Srujan Kumar Kaile, Yuanming Zhu, Julian Camilo Gomez Diaz, Sebastian Hoyos, Samuel Palermo

Abstract:

A digital-to-analog converter (DAC)-based polar transmitter (TX) is proposed for multicarrier signaling in wireline applications. The proposed TX achieves a 50-Gb/s total data rate with maximized spectral efficiency by using three parallel 5-GS/s DAC-based drivers and two orthogonal carriers of 5 and 10 GHz. The three DAC-based drivers operating …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3376079
Publisher: IEEE

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A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking

A 3-nm FinFET 27.6-Mbit/mm2 Single-Port 6T SRAM Enabling 0.48–1.2 V Wide Operating Range With Far-End Pre-Charge and Weak-Bit Tracking 150 150
Author(s): Yumito Aoyagi, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

A 3-nm FinFET single-port (SP) 6T SRAM macro is proposed that utilizes a far-end pre-charge (FPC) circuit and weak-bit (WB) tracking circuit. These circuits can decrease write cycle time by decreasing the pre-charge period and engaging read cycle time by enhancing the trackability of sense enable timing over supply voltage. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1225 – 1234
Year of Publication: 2024
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2024.3355447
Publisher: IEEE

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