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A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input

A 16× Interleaved 32-GS/s 8b Hybrid ADC With Self-Tracking Inter-Stage Gain Achieving 44.3-dB SFDR at 20.9-GHz Input 150 150
Author(s): Hongzhi Liang, Jun Chang, Yixiao Luo, Li Dang, Haolin Han, Yi Shen, Dengquan Li, Shubin Liu, Ruixue Ding, Zhangming Zhu

Abstract:

This article presents a 32-GS/s 16-channel hierarchical time-interleaved (TI) hybrid analog-to-digital converter (ADC). The prototype utilizes the intrinsic high-speed quantization of time-domain (TD) ADC to reduce the interleaving factor. By incorporating hierarchical sampling and a cascode sampler, the compact TI-ADC achieves 44.3-dB spurious-free dynamic range (SFDR) at 20.9-GHz input. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680919
Publisher: IEEE

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A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power

A 6.78-MHz Single-Stage Regulating Rectifier With Dual Outputs Simultaneously Charged in a Half Cycle Achieving 92.2% Efficiency and 131 mW Output Power 150 150
Author(s): Quanrong Zhuang, Junyi Sun, Bo Li, Jie Lu, Zixu Wang, Qi’an Zhu, Xin Zhang, Yi Shi, Hao Qiu

Abstract:

Targeting the wireless power transfer (WPT) to implantable medical devices (IMDs), this work presents a 6.78 MHz single-stage dual-output (SSDO) regulating rectifier. It can support the simultaneous charging of both outputs ( $V_{\text {OUT1}}$ and $V_{\text {OUT2}}$ , $V_{\text {OUT1}} \gt V_{\text {OUT2}}$ ) in a half cycle, rather than …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682308
Publisher: IEEE

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A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems

A 95.3% Efficiency APT/AET/SPT Multimode Multiband CMOS/GaN Envelope Tracking for 6G-Oriented Systems 150 150
Author(s): Chun-Yuan Chen, Yi-Chun Huang, Ke-Horng Chen, Ying-Hsi Lin, Shian-Ru Lin, Tsung-Yen Tsai

Abstract:

This article proposes an envelope-tracking (ET) supply modulator (SM) that is scalable for sixth-generation (6G) communication systems. The design leverages a cost-efficient CMOS process for the power converters and a high-performance GaN process for the high-frequency power amplifier (PA) and the depletion-mode-only GaN-based amplifier. The proposed ET supply modulator (ETSM) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681319
Publisher: IEEE

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A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators

A 0.4-V 988-nW Tiny Footprint Time-Domain Audio Feature Extraction ASIC for Keyword Spotting Using Injection-Locked Oscillators 150 150
Author(s): Ali Mostafa, Emmanuel Hardy, Franck Badets

Abstract:

This work presents an injection-locked oscillator (ILO)-based feature extraction (FEx) system. It combines voltage- and time-domain signal processing to implement a power-efficient programmable gain amplifier (PGA) and a small-footprint, high-selectivity ILO-based voltage-to-time converter bandpass filter (VTC-BPF) bank and rectifier. The VTC-BPF enables direct analog-to-time conversion, eliminating the need for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681481
Publisher: IEEE

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A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction

A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction 150 150
Author(s): Tomotaka Tanaka, Koji Nii, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents a 2-read/write (2RW) pseudo dual-port (PDP) static random access memory (SRAM) macro implemented in advanced 3nm Fin-FET technology, achieving a competitive bit density of 19.87Mbit/mm2 for advanced nodes. To address challenges in process scaling, reliability under process voltage temperature variations, and dynamic power consumption, two …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682256
Publisher: IEEE

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A Low-Jitter Fractional-N Sampling PLL With Voltage-Domain Quantization-Error Cancellation Using a Nonlinearity-Replication Technique

A Low-Jitter Fractional-N Sampling PLL With Voltage-Domain Quantization-Error Cancellation Using a Nonlinearity-Replication Technique 150 150
Author(s): Yuhwan Shin, Juyeop Kim, Junseok Lee, Yongwoo Jo, Jaehyouk Choi

Abstract:

This work presents a low-jitter, low-fractional-spur fractional- $N$ digital sampling phase-locked loop (SPLL) that generates output frequencies from 10.4to 11.8GHz. Conventional fractional- $N$ PLLs employ a digital-to-time converter (DTC) to cancel the quantization error (Q-error) of the delta-sigma modulator ( $Delta Sigma $ M). To address the nonlinearity (NL) of the DTC, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681940
Publisher: IEEE

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High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI

High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI 150 150
Author(s): Alessio Antolini, Andrea Lico, Francesco Zavalloni, Lorenzo Greco, Riccardo Zurla, Jacopo Bertolini, Riccardo Vignali, Luca Iannelli, Emanuela Calvetti, Marco Pasotti, Alessandro Cabrini, Eleonora Franchi Scarselli

Abstract:

This article presents a high-precision close-to-analog programming methodology for phase-change memory (PCM) cells, targeting analog in-memory computing (AiMC) architectures for edge-artificial intelligence (AI) applications. By leveraging an iterative accumulation approach during the verify phase, the proposed technique enhances the effective number of bits (ENOBs) achievable in PCM cells. Experimental validation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680266
Publisher: IEEE

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A Continuous-Time Zoom Sensor Readout Frontend With Fast Tracking and Floating-Gm-CCO Integrator

A Continuous-Time Zoom Sensor Readout Frontend With Fast Tracking and Floating-Gm-CCO Integrator 150 150
Author(s): Haoyang Luo, Zongnan Wang, Jiarui Wang, Bingrui Li, Zilong Shen, Yang Liu, Xiaojie Duan, Yuan Wang, Xiyuan Tang

Abstract:

Emerging edge applications processing weak signals in noisy environments demand sensor readout frontends with low noise, low power, high dynamic range (DR), and high input impedance. This article presents a zoom sensor readout frontend design that can track signals with rapid changes over a wide DR with high energy efficiency. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3677053
Publisher: IEEE

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A 28-nm Digital Transpose SRAM Compute-in-Memory Macro With Accurate/Approximate Dual Mode for Floating-Point Edge Training and Inference

A 28-nm Digital Transpose SRAM Compute-in-Memory Macro With Accurate/Approximate Dual Mode for Floating-Point Edge Training and Inference 150 150
Author(s): Yiyang Yuan, Bingxin Zhang, Yiming Yang, Yishan Luo, Qirui Chen, Haitao Wang, Qihao Liu, Zhiming Chen, Hao Wu, Jinshan Yue, Shidong Lv, Xinghua Wang, Pui-In Mak, Xiaoran Li, Feng Zhang

Abstract:

Static random-access memory (SRAM)-based computing-in-memory (CIM) macros have been widely studied to improve the energy efficiency of edge artificial intelligence (AI) inference tasks. However, less attention has been given to AI training, which requires CIM macros to not only perform matrix multiply-accumulate (MAC) operations but also support matrix transposition. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3679560
Publisher: IEEE

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