A 37.8Mb/mm2 SRAM in Intel 18A Technology Featuring a Resistive Supply-Line Write Scheme and Write-Assist With Parallel Boost Injection https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
A high-density, SRAM-based Register File (RF) has been demonstrated in Intel 18A Technology 1, 2 featuring RibbonFET GAA transistors and a Back Side Power Delivery Network (BSDPN). The RF is optimized for high density and array efficiency and achieves a density of 37.8Mb/mm2, the highest density reported to date for an …