error correction code (ECC)

Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro

Smart Write Algorithm to Enhance Performances and Reliability of an RRAM Macro 150 150

Abstract:

This article presents a comprehensive assessment of the impact of various design assist techniques on the inherent performance and reliability of native resistive RAM (RRAM) on silicon. The collaborative optimization of design and technology plays a crucial role in replacing conventional flash memory as the leading solution. We showcase that …

View on IEEE Xplore