Electrodes

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A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue

A 10.2 V 8-Channel Neural Stimulator With Nearly Constant Efficiency Across 90% Current Range and a TDM ADC-Based One-Shot Charge Balancing With < 6 mV Residue 150 150
Author(s): Alin Thomas Tharakan, Cong Huang, Yiheng Fu, Horacio Londoño Ramírez, Stéphanie P. Lacour, Mahsa Shoaran

Abstract:

This letter presents an 8-channel current-mode stimulator achieving a ±10.2 V voltage compliance in a standard CMOS process, supporting up to 4.5 mA stimulation current per channel. The proposed dynamic charge pump (DCP), which adaptively sizes its switches based on the stimulation current, helps achieve ~15% higher power efficiency at low currents compared …

Published in: IEEE Solid-State Circuits Letters
Page(s): 49 – 52
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3653014
Publisher: IEEE

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A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions

A Cryo-BiCMOS Controller for Quantum Computers based on Trapped Beryllium Ions 150 150
Author(s): Peter Toth, Paul Shine Eugine, Yerzhan Kudabay, Kaoru Yamashita, Sebastian Halama, Judi Parvizinejad, Marco Bonkowski, Hiroki Ishikuro, Christian Ospelkaus, Vadim Issakov

Abstract:

This article presents a cryo-BiCMOS system on chip (SoC) designed for single and two-qubit gate operations for quantum computers (QCs) based on beryllium trapped-ions (TIs). Signal generation from 0.7 to 1.6 GHz is supported, covering all microwave transitions in a ${}^{9}\text {Be}^{+}$ QC realization. An integrated 48-kbit waveform memory is implemented for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 673 – 689
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3632204
Publisher: IEEE

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Integrating Atomistic Insights With Circuit Simulations via Transformer-Driven Symbolic Regression

Integrating Atomistic Insights With Circuit Simulations via Transformer-Driven Symbolic Regression 150 150
Author(s): Md Rahatul Islam Udoy, Jack Hutchins, Shamiul Alam, Catherine Schuman, Ahmedullah Aziz

Abstract:

This article introduces a framework that establishes a cohesive link between the first principles-based simulations and circuit-level analyses using a machine learning-based compact modeling platform. Starting with atomistic simulations, the framework examines the microscopic details of material behavior, forming the foundation for later stages. The generated datasets, with molecular insights, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 179 – 187
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3624662
Publisher: IEEE

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A Linear Dynamic Voltage Scaling Technique With Adaptive Minimum Voltage Headroom Tracking for Implantable Neurostimulation

A Linear Dynamic Voltage Scaling Technique With Adaptive Minimum Voltage Headroom Tracking for Implantable Neurostimulation 150 150
Author(s): Kai Cui, Honglei Xu, Yingduo Duan, Yan Lu, Xiaoya Fan, Yanzhao Ma

Abstract:

This letter presents a linear dynamic voltage scaling (DVS) technique using a dual-loop multistage charge-pump maintaining the minimum voltage headroom for implantable neurostimulation. By adopting an analog DVS with adaptive feedback divider, the stimulus current source could be always kept operating at the boundary of the saturation region and the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 261 – 264
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3608096
Publisher: IEEE

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