A Bidirectional Neuromodulation Chipset With Algorithm-Aware AFE Optimization and High-Voltage-Compliant Stimulation https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
This work presents a bidirectional neuromodulation chipset with 64-channel neural analog front-end (AFE), and a four-channel current stimulator. The chipset employs a heterogeneous architecture, combining a 28-nm low-voltage (LV) CMOS process for the AFE and the digital backend (DBE) to improve area and power efficiency, with a 180-nm high-voltage (HV) …