Electric fields

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Energy-efficient Logic-in-memory and Neuromorphic Computing in RSD MOSFETs

Energy-efficient Logic-in-memory and Neuromorphic Computing in RSD MOSFETs 150 150
Author(s): Md. Hasan Raza Ansari, Bashayr Alqahtani, Naveen Kumar, Vihar Georgiev, Nazek El-Atab

Abstract:

This work highlights the potential application of raised source and drain (RSD) MOSFETs-based charge trapping memory (CTM) for next-generation computing applications. This simulation study presents a double gate (DG)-RSD MOSFET technology with a short gate length (50 nm) to significantly improve the performance of logic-in-memory (LIM) and neuromorphic computing (NC) …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3630217
Publisher: IEEE

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Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model

Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model 150 150
Author(s): Mohammad Adnaan, Saeideh Alinezhad Chamazcoti, Emil Karimov, Marie Garcia Bardon, Francky Catthoor, Jan van Houdt, Azad Naeemi

Abstract:

We present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FERAM) as an alternative to dynamic random access memory (DRAM). We start with the ferroelectric capacitor device model and perform array-level memory circuit simulation. Then, we …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 99 – 106
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3618883
Publisher: IEEE

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