device variability

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Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process

Characterization and Modeling of Multilevel Analog ReRAM Synapses in the Sky130 Process 150 150
Author(s): Irem Didin, Carl Brando, Ching-Yi Lin, Sahil Shah

Abstract:

Non-volatile memory devices play a key role in enabling energy-efficient computing. Among them, analog non-volatile memories such as Resistive Random Access Memory (ReRAM) offer high density and low power compared to conventional digital memories. However, their analog nature introduces device-level variability that impacts computational accuracy. This work presents the characterization …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3670667
Publisher: IEEE

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Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors

Polar-Axis Orientation Fluctuations and the Impact on the Intrinsic Variability in Ferroelectric Capacitors 150 150
Author(s): Wei Zhang, Jianze Wang, Xuanyao Fong

Abstract:

We utilized phase-field simulations to investigate the effects of polar-axis (PA) orientation fluctuations on the extrinsic properties of single ferroelectric (FE) grains, focusing on the coercive electrical field (EC) and the remnant polarization (Pr). The underlying mechanisms through which PA orientation fluctuations influence polarization behavior are studied to gain insights …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 74 – 80
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3586589
Publisher: IEEE

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