CMOS technology

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An 800MS/s 13b 2x TI Pipelined-SAR ADC with Rapid Digital Amplification

An 800MS/s 13b 2x TI Pipelined-SAR ADC with Rapid Digital Amplification 150 150
Author(s): Peizhe Li, Danfeng Zhai, Qi Liu, Chixiao Chen

Abstract:

This work proposes a rapid digital amplification (RDA) with residue-aware reference, offering an equivalent open-loop (OL) gain enhancement of 25 dB and reducing the inter-stage gain error (ISGE)-induced SNR degradation by 20 dB, with an extra amplification latency of only 200 ps. It is implemented in an 800MS/s 13b two-way time-interleaved (…

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3684735
Publisher: IEEE

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Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node

Self-Enabled Write Assist Cells for High-Density SRAM in Resistance-Dominated Technology Node 150 150
Author(s): Minjune Yeo, Seungjae Yei, Keonhee Cho, Giseok Kim, Mingu Kang, Seong-Ook Jung

Abstract:

As technology scaling increases interconnect resistance, writeability degradation in static random access memory (SRAM) becomes critical. This article presents a self-enabled write assist cell (SEWAC) that mitigates writeability degradation caused by increased bitline resistance (R ${}_{\mathrm {BL}}$ ) without requiring timing control. The SEWAC has a cell-compatible layout with the standard 6…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3681916
Publisher: IEEE

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A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction

A 3nm Fin-FET 19.87-Mbit/mm2 2RW Pseudo Dual-Port 6T SRAM With Metal Wire-R Tracking and Sequential Access-Aware Dynamic Power Reduction 150 150
Author(s): Tomotaka Tanaka, Koji Nii, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang

Abstract:

This article presents a 2-read/write (2RW) pseudo dual-port (PDP) static random access memory (SRAM) macro implemented in advanced 3nm Fin-FET technology, achieving a competitive bit density of 19.87Mbit/mm2 for advanced nodes. To address challenges in process scaling, reliability under process voltage temperature variations, and dynamic power consumption, two …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3682256
Publisher: IEEE

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A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture

A Novel VGSOT-pMTJ Write Circuit for Hybrid CMOS/MTJ CIM Architecture 150 150
Author(s): Prashanth Barla, Ramya Moodakare

Abstract:

Hybrid computation-in-memory (CIM) architecture has emerged as the most promising alternative to overcome the drawbacks of the conventional CMOS-only devices used in the conventional von-Neumann architecture. In the hybrid CIM architecture, a pair of perpendicular magnetic tunnel junctions (pMTJs) is used to store one bit of information. Though there are …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 65 – 69
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3679830
Publisher: IEEE

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A Bidirectional Neuromodulation Chipset With Algorithm-Aware AFE Optimization and High-Voltage-Compliant Stimulation

A Bidirectional Neuromodulation Chipset With Algorithm-Aware AFE Optimization and High-Voltage-Compliant Stimulation 150 150
Author(s): Xiaohua Huang, Hoda Yassin, Beatriz Lafuente Alcazar, Arash Akhoundi, Dante G. Muratore

Abstract:

This work presents a bidirectional neuromodulation chipset with 64-channel neural analog front-end (AFE), and a four-channel current stimulator. The chipset employs a heterogeneous architecture, combining a 28-nm low-voltage (LV) CMOS process for the AFE and the digital backend (DBE) to improve area and power efficiency, with a 180-nm high-voltage (HV) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3650066
Publisher: IEEE

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A 28-nm Digital Compute-in-Memory Ising Annealer With Asynchronous Random Number Generator for Traveling Salesman Problem

A 28-nm Digital Compute-in-Memory Ising Annealer With Asynchronous Random Number Generator for Traveling Salesman Problem 150 150
Author(s): Yuyao Kong, Haomei Liu, Vaidehi Garg, Shimeng Yu

Abstract:

This work presents a compact digital compute-in-memory (DCIM) Ising annealer targeting large-scale combinatorial optimization. A centroid-based weight mapping method combined with hierarchical clustering reduces the memory capacity required for traveling salesman problem (TSP) weights, enabling efficient mapping with limited on-chip storage. An asynchronous random number generator (ARNG) based on dual …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 4
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639178
Publisher: IEEE

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A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication

A Fully Integrated Galvanic Isolator for Gate Drivers With Asynchronous 100/167 Mb/s ASK/FSK Full-Duplex Communication 150 150
Author(s): Lucrezia Navarin, Karl Norling, Marco Parenzan, Stefano Ruzzu, Andrea Neviani, Andrea Bevilacqua

Abstract:

A fully integrated galvanic isolator for gate drivers that supports high-speed, asynchronous, full-duplex communication is presented. Data transmission from the microcontroller to the power device is achieved using amplitude-shift keying (ASK) at 100 Mb/s, while simultaneous communication in the opposite direction is implemented using frequency-shift keying (FSK) at 167 Mb/s. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 289 – 292
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3611018
Publisher: IEEE

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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM 150 150
Author(s): Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch

Abstract:

Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications. Ferroelectric (FE) is a promising candidate to develop the complementary metal oxide semiconductor (CMOS)-compatible nonvolatile memories. Hence, in this work, we investigate the effectiveness …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 34 – 41
Year of Publication: 2025
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2025.3547797
Publisher: IEEE

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