CMOS process

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A 550 μW Capacitor-Assisted Transformer-Based VCO Achieving 204 dBc/Hz FoMA at 1MHz Frequency Offset

A 550 μW Capacitor-Assisted Transformer-Based VCO Achieving 204 dBc/Hz FoMA at 1MHz Frequency Offset 150 150
Author(s): Teng-Shen Yang, Liang-Hung Lu

Abstract:

This letter presents a capacitor-assisted transformer-based voltage-controlled oscillator (VCO) that achieves a low flicker-noise corner with sub-milliwatt power consumption and compact chip area. By introducing a small assisting capacitor into the transformer, the higher-order tank impedance is reshaped from the second-resonance region toward the third-resonance region, resulting in a more …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3690818
Publisher: IEEE

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A Time-Domain CNN Engine With Adaptive-Precision Computing and Threshold-Controllable Prediction for Edge Computing

A Time-Domain CNN Engine With Adaptive-Precision Computing and Threshold-Controllable Prediction for Edge Computing 150 150
Author(s): Aoming Zhan, Ye Zhao, Yulin Zhang, Gengchen Han, Qihang Jiang, Long Chen, Yumei Zhou, Shushan Qiao

Abstract:

With the growing demand for energy-efficient convolutional neural network (CNN) accelerators in edge intelligence, conventional digital CNN processors with fixed precision incur excessive switching energy and limited scalability. This work presents a time-domain CNN (TD-CNN) engine that achieves adaptive precision and computation reduction for ultralow-power operation. The main features include: 1) …

Published in: IEEE Solid-State Circuits Letters
Page(s): 142 – 145
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3687395
Publisher: IEEE

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An 18.3-μW 108.3-dB DR Discrete-Time Delta-Sigma Modulator Using a Loop Filter Auto-Shift Technique

An 18.3-μW 108.3-dB DR Discrete-Time Delta-Sigma Modulator Using a Loop Filter Auto-Shift Technique 150 150
Author(s): Cong Wei, Ziqiang Peng, Lijie Huang, Jinze Lai, Rongshan Wei, Xiaoqiang Lu, Zhichao Tan

Abstract:

This article presents a discrete-time, third-order, single-loop, 17-level delta-sigma modulator (DSM) for high-dynamic-range sensor measurement applications, which employs a loop filter auto-shift (LFAS) technique. It uses an on-chip 1.5-bit Schmitt monitor to determine whether the input amplitude is large or small. The DSM automatically shifts to loop filter A for …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3684106
Publisher: IEEE

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A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques

A 500 MS/s Robust 2b/cycle Pipelined-SAR ADC Achieving 64.6-dB SNDR and 82.6-dB SFDR With Linearity Enhancement Techniques 150 150
Author(s): Qiang Yu, Zheng Zhu, Lulu Zhang, Qin Huang, Yao Feng, Chao Liang, Biao Hu, Ling Du, Rongbin Yang, Shuangyi Wu, Qiang Li

Abstract:

This letter presents a 14-bit 500-MS/s 3-stage pipelined successive approximation register (SAR) analog-to-digital converter (ADC). By exploiting robust 2b/cycle SAR ADCs, this ADC incorporates significant voltage and time redundancy. High SFDR is achieved through several linearity enhancement techniques. First, a DAC splitting technique addresses the common-mode voltage matching …

Published in: IEEE Solid-State Circuits Letters
Page(s): 9 – 12
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3639322
Publisher: IEEE

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A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface

A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface 150 150
Author(s): Jing Wang, Jun He, Man-Kay Law, Xinzhe Wang, Futian Liang, Lin Cheng

Abstract:

This work proposes a temperature and process-compensated low-power Cryo-CMOS voltage reference without trimming for quantum integrated interface, which is capable of operating continuously from room temperature (RT) down to cryogenic temperatures. By compensating for the main accuracy limiting factors including the process dependence of the transistor threshold voltage, device mismatch …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3242 – 3256
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3530472
Publisher: IEEE

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