Cells (biology)

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A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS

A 194.6-TOPS/W Pipelined All Current-Domain Mixed-Signal Compute in Memory in 28-nm CMOS 150 150
Author(s): Saideep Cherukuri, N. V. Kidambi, W. C. Wang, I. Chakraborty, S. Zhang, L. Shamieh, J. B. Steinberg, S. Mukhopadhyay

Abstract:

Mixed-signal CIM (MS-CIM) faces bit-cell nonlinearity, poor linearity at high frequency, and throughput limits. We present a hybrid pipelined current-domain MS-CIM macro featuring bit-cell matched linearization interface (BMLI) and loop-unrolled successive approximation refinement (SAR) ADC fabricated in 28-nm CMOS. A $256{\,}\times {\,}256$ SRAM array with 8-bit inputs, 8-bit weights achieve 10.16-TOPS …

Published in: IEEE Solid-State Circuits Letters
Page(s): 174 – 177
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697990
Publisher: IEEE

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Open DRAM Model Part II: Enabling Processing-in-Memory in 3D DRAM

Open DRAM Model Part II: Enabling Processing-in-Memory in 3D DRAM 150 150
Author(s): Kiseok Lee, Seongkwang Lim, Suman Datta, Shimeng Yu

Abstract:

Processing-in-memory (PIM) by implementing Boolean logic function in DRAM has been proposed to alleviate the memory wall problem in data-intensive computing. However, quantitatively evaluating DRAM-based logic operations across different DRAM architectures remains challenging due to the lack of publicly available DRAM cell and peripheral transistor models that accurately capture their …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704508
Publisher: IEEE

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Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multi-Tier CFET SRAM

Topology-Aware Layout Design for Area-Decoupled Transistor Sizing in Multi-Tier CFET SRAM 150 150
Author(s): Yutian Zhang, Jiaquan Fang, Khawar Sarfraz, Mansun Chan

Abstract:

This work shows that multi-tier complementary FET (CFET) static random-access memory (SRAM) can decouple the area term from PPA-oriented transistor sizing. A topology-aware layout design is used to construct orthogonal and point-symmetric multi-tier CFET SRAM cells under 1-nm-class design rules, enabling high-density (HD), high-performance (HP), and high-current (HC) sizing at …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3709007
Publisher: IEEE

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Open DRAM Model Part I: Cross-Layer Device, Array, and Circuit Analysis with BL-to-BL Coupling Mitigation for 4F² VCT DRAM

Open DRAM Model Part I: Cross-Layer Device, Array, and Circuit Analysis with BL-to-BL Coupling Mitigation for 4F² VCT DRAM 150 150
Author(s): Kiseok Lee, Seongkwang Lim, Suman Datta, Shimeng Yu

Abstract:

DRAM scaling toward 4F² vertical channel transistors (VCT) fundamentally reshapes device, array, and circuit-level design trade-offs. However, the lack of open-source DRAM device model that is calibrated with recent industry trends prohibits broader innovations in the research community. In this work, we present an “Open DRAM Model” and showcase its …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3704358
Publisher: IEEE

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A Quadrature-Rotation Phased-Array Transmitter With High-Resolution Phase Tuning and Complex Domain Power Back-Off Efficiency Enhancement

A Quadrature-Rotation Phased-Array Transmitter With High-Resolution Phase Tuning and Complex Domain Power Back-Off Efficiency Enhancement 150 150
Author(s): Jie Zhou, Bingzheng Yang, Hongxin Tang, Xun Luo

Abstract:

In this article, a four-element digital-modulated phased-array transmitter based on quadrature switched/floated-capacitor power amplifiers (SFCPAs) and reconfigurable switched-capacitor tuning lines (RSCTLs) is proposed. Phase shifting in each element is achieved by hybrid coarse and fine phase-tuning approaches. The SFCPAs with the quadrature-rotation technique are presented for coarse phase tuning. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3702007
Publisher: IEEE

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A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2

A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm2 150 150
Author(s): Marco Pasotti, Riccardo Zurla, J. J. Bertolini Agnoletto, Emanuela Calvetti, Alessio Antolini, Andrea Lico, Giuseppe Desoli, Riccardo Vignali, Luca Iannelli, Luigi Croce, Francesco Zavalloni, Eleonora Franchi Scarselli, Alessandro Cabrini

Abstract:

In-memory computing (IMC) hardware accelerators for deep neural networks (DNNs) require storing a massive number of coefficients within a single computing macro to avoid performance degradation in multicore clusters. This aspect, often overlooked by common figures of merit (FoMs), can be effectively addressed by phase-change memory (PCM) technology, thanks to …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3693894
Publisher: IEEE

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