Beyond Backside Power: Backside Signal Routing as Technology Booster for Standard-Cell Scaling https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
Advances in process technology enabling backside metals (BSMs) and contacts offer new design–technology co-optimization (DTCO) opportunities to further enhance power, performance, and area gains (PPA) in sub-3-nm nodes. This work exploits backside (BS) contact technology within standard cells to extend both signal and clock routing to BSM layers, …