Baseband

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A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16 nm FinFET Technology 150 150
Author(s): Ethan Chou, Hesham Beshary, Nima Baniasadi, Ali M. Niknejad

Abstract:

This letter presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16 nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 349 – 352
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626442
Publisher: IEEE

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A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3

A 1-8 GHz, 190MHz BB BW Mixer-First Receiver With Bootstrapped Mixer Switches Achieving Over 16dBm In-Band IIP3 150 150
Author(s): Erwin Hardeveld, Ronan van der Zee, Bram Nauta

Abstract:

In this article, we propose a wideband mixer-first receiver with improved in-band (IB) linearity. It uses bootstrapped N-path mixer switches to achieve a constant on-state gate–source voltage for large IB signals. We analyze the tradeoff between on-state resistance and off-state subthreshold current in conventional mixer switches and introduce a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3606117
Publisher: IEEE

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A Battery-Free BLE Backscatter Communication Chip for Wearable Systems

A Battery-Free BLE Backscatter Communication Chip for Wearable Systems 150 150
Author(s): Yongling Zhang, Ji Xiong, Junzai Chen, Xiaoyu Li, Jinrui Zuo, Yan Wang, Xiaoyi Wang, Miao Meng

Abstract:

This letter presents a backscatter chip that features bidirectional communication with commodity bluetooth low-energy (BLE) transceivers. For uplink, the chip reflects a reverse-whitened BLE tone into single-sideband (SSB) GFSK-modulated BLE packets via a proposed replica VCO-based GFSK modulator and an inductor-free SSB reflector. For downlink, the BLE packets are frequency …

Published in: IEEE Solid-State Circuits Letters
Page(s): 297 – 300
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3612423
Publisher: IEEE

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A Millimeter-Wave Direct Digital Transmitter Using Multiphase Subharmonic Switching PA

A Millimeter-Wave Direct Digital Transmitter Using Multiphase Subharmonic Switching PA 150 150
Author(s): Soumya Mahapatra, Mostafa Ayesh, Ce Yang, Mayank Palaria, Shiyu Su, Aoyang Zhang, Mike Shuo-Wei Chen

Abstract:

This article presents a direct digital transmitter (TX) employing a multiphase subharmonic switching (MP-SHS) power amplifier (PA) to achieve both high peak and power back-off (PBO) efficiency with wide signal bandwidth. A phase-shifted subharmonic (SH) local oscillator (LO) divider is proposed to suppress SH spurs with minimal implementation overhead by …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3605564
Publisher: IEEE

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A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression

A Simultaneous Dual-Carrier Transformer-Coupled Passive Mixer-First Receiver Front-End Supporting Blocker Suppression 150 150
Author(s): Jamie C. Ye, Alain H. Antón, Sanaz Sadeghi, Russ H. Huang, Alyosha C. Molnar

Abstract:

A high dynamic range N-path passive mixer-first receiver architecture capable of simultaneously down-converting two arbitrary bands through a single RF port is presented. The architecture consists of two passive mixers arranged in a series configuration with a transformer front-end to minimize cross-loading between mixers while still providing impedance transparency and …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1541 – 1553
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3546082
Publisher: IEEE

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