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A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology

A High-Power Wideband Sub-THz Power Amplifier With Asymmetric Slotline-Based Series–Parallel Combiner in 130-nm SiGe BiCMOS Technology 150 150
Author(s): Gunwoo Park, Hyunjoon Kim, Sanggeun Jeon

Abstract:

This article presents a high-power, wideband sub-terahertz power amplifier (PA) implemented in a 130-nm SiGe BiCMOS technology. The PA features a novel asymmetric slotline-based series–parallel combiner (ASSPC) for output power combining. The ASSPC provides both low-loss, wideband combining and efficient admittance matching for four differential cascode PA unit cells, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3656477
Publisher: IEEE

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A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth

A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth 150 150
Author(s): Basem Abdelaziz Abdelmagid, Yuqi Liu, Hua Wang

Abstract:

This work presents a compact 110–140 GHz bidirectional D-band passive phase shifter based on combining a 5-stage capacitively-loaded reflective-type PS (RTPS) with a wideband 0°/180° stage. The design achieves a 360° phase range with a resolution of 11.25°. By applying: 1) a wideband RTPS design methodology on the stage level; 2) frequency/switching-staggering techniques among the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 329 – 332
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3622233
Publisher: IEEE

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