associative memory

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Benchmarking of Emerging Material-Based TCAMs

Benchmarking of Emerging Material-Based TCAMs 150 150
Author(s): Ashwin Tunga, Junzhe Kang, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, Shaloo Rakheja

Abstract:

This work presents a comprehensive benchmarking of ternary content-addressable memory (TCAM) implementations using timing-accurate SPICE simulations, systematically comparing conventional CMOS designs with emerging device technologies, including magnetic tunnel junctions (MTJs), ferroelectric tunnel junctions (FTJs), ferroelectric field-effect transistors (FeFETs), and 2-D reconfigurable field-effect transistors (2D RFETs). Key performance metrics, including search …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 104 – 112
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3687143
Publisher: IEEE

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A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance

A 128-kbit Approximate Search-Capable Content-Addressable Memory (CAM) With Tunable Hamming Distance 150 150
Author(s): Esteban Garzón, Eyal Rechef, Roman Golman, Odem Harel, Yuval Harary, Paz Snapir, Marco Lanuzza, Adam Teman, Leonid Yavits

Abstract:

The growing need for approximate matching in data-intensive applications, such as data analytics, machine learning, deep learning, and computational genomics has driven the proposal of our Hamming distance (HD) tolerant content-addressable memory (HD-CAM). HD-CAM features a modified NOR-type associative memory cell that leverages the discharge speed of the matchline (ML) …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 3009 – 3019
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3529715
Publisher: IEEE

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