Analog computing

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DRAMP: A Fully Parallel 1T1C DRAM Compute-in-Memory Macro With Mismatch-Robust Word-Line Ramp-Charging Operation

DRAMP: A Fully Parallel 1T1C DRAM Compute-in-Memory Macro With Mismatch-Robust Word-Line Ramp-Charging Operation 150 150
Author(s): Jihwan Cho, Dalta Imam Maulana, Minkyu Yang, Changjoo Park, Wanyeong Jung

Abstract:

This article presents DRAMP—the first silicon-verified, fully parallel one-transistor–one-capacitor (1T1C) dynamic random access memory (DRAM) compute-in-memory (CIM) macro for high computational density and energy efficiency. The key enabling technique is a word-line (WL) ramp-charging operation. By applying a constant-slope ramp and periodic pulses to the WLs, the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3737910
Publisher: IEEE

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Medusa: A Scalable Quantum-Inspired k-SAT Solver With Make and Break Feedback

Medusa: A Scalable Quantum-Inspired k-SAT Solver With Make and Break Feedback 150 150
Author(s): Luke D. Wormald, Ying-Tuan Hsu, Evangelos Dikopoulos, Wei Tang, Benjamin Datsko, Ali Hammoud, Zhengya Zhang, Michael P. Flynn

Abstract:

Boolean satisfiability (SAT or $k$ -SAT, $k ge 3$ ) is a binary combinatorial optimization problem (COP) that is challenging for traditional classical computing to address in polynomial time. Quantum and quantum-inspired systems have been touted to tackle these and similar nondeterministic polynomial-time (NP) problems. This work describes Medusa, a quantum-inspired $k$ …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3726445
Publisher: IEEE

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A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications

A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications 150 150
Author(s): Maysara Hamada, Mostafa Toubar, Zixu Wang, Nishant Bakshi, Hsiang-Chun Cheng, Mayank Palaria, Joshua Yang, Mike Shuo-Wei Chen

Abstract:

As crossbar-based analog computing grows in popularity for high-speed, energy-efficient processing, the need to drive discrete-time signals to heavy loads arises. This letter presents a novel bi-slewing CMOS driver utilizing high slew-rate error amplifiers and a push–pull stage. The proposed driver achieves a measured settling time of 8.5 ns and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 218 – 221
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3717852
Publisher: IEEE

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TD-dAJC: A 100 MS/s 2 pJ/Pixel Time-Domain Weight and Integrating-MAC-Based Direct Analog to MJPEG Compression for Video Sensor Nodes

TD-dAJC: A 100 MS/s 2 pJ/Pixel Time-Domain Weight and Integrating-MAC-Based Direct Analog to MJPEG Compression for Video Sensor Nodes 150 150
Author(s): Harshit Naman, Gourab Barik, Yudhajit Ray, Shreyas Sen

Abstract:

Always-on, high-quality video sensors are increasingly required in wearables, surveillance, and Internet-of-Things (IoT) devices, where stringent energy constraints make efficient in-sensor compression necessary. These systems must support high-definition (HD) and 4 K video, yet conventional digital video compression pipelines consume significant power because high-speed analog-to-digital converters (ADCs) must digitize every pixel, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3712196
Publisher: IEEE

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PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC

PERCEL: A Rewritable NVM CIM Incorporating a CTT-Based Per-Cell DAC 150 150
Author(s): Samyak Chakrabarty, Vinod Jacob, Mohammadreza Zeinali, Georgios Karfakis, Siyun Qiao, Ziyi Guo, Puneet Gupta, Subramanian Iyer, Sudhakar Pamarti

Abstract:

Compute-in-memory (CiM) accelerators perform matrix vector multiplications (MVMs) directly inside memory arrays, reducing data movement and improving both energy efficiency and throughput for artificial intelligence (AI) workloads. To reduce the number of conversions, recent designs use multibit compute cells. Nevertheless, practical multibit CiM still faces a tension among accuracy, efficiency, …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 70 – 77
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3680497
Publisher: IEEE

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AACIM: A 2785-TOPS/W, 161-TOP/mm2, <1.17%-RMSE, Analog-In Analog-Out Computing-In-Memory Macro in 28 nm

AACIM: A 2785-TOPS/W, 161-TOP/mm2, <1.17%-RMSE, Analog-In Analog-Out Computing-In-Memory Macro in 28 nm 150 150
Author(s): Rentao Wan, Chuan-Tung Lin, Bo Zhang, Yannis Tsividis, Mingoo Seok

Abstract:

This article presents an analog-in analog-out CIM macro (AACIM) for use in analog deep neural network (DNN) processors. Our macro receives analog inputs, performs a 64-by-32 vector–matrix multiplication (VMM) with a current-discharging computation mechanism, and produces analog outputs. It stores a 4-bit weight as an analog voltage in the …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3622309
Publisher: IEEE

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Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation

Fully Analog, Multi-Lag, RF Correlators for Code-Domain Radars Using Margin Propagation 150 150
Author(s): Aswin Undavalli, Kareem Rashed, Abdul Rakib Hossain, Gert Cauwenberghs, Shantanu Chakrabartty, Arun Natarajan, Aravind Nagulu

Abstract:

We present a fully analog, multiplier-free, sampled-domain RF correlator to achieve high energy efficiency for radar workloads. The RF correlator employs a split-source follower architecture that leverages the margin propagation (MP) computing paradigm in the sampled domain. As a proof of concept, we implement a $256 \times 256$ fully analog cross correlator …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3602920
Publisher: IEEE

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