Amplifiers

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A 10-bit Source-Driver IC for High-Resolution OLED-on-Silicon Displays With All-Channel Automatic Offset Calibration and Data-Aware Slew-Rate Enhancement

A 10-bit Source-Driver IC for High-Resolution OLED-on-Silicon Displays With All-Channel Automatic Offset Calibration and Data-Aware Slew-Rate Enhancement 150 150
Author(s): Junghwan Oh, Wiman Yoo, Dong-Kun Lee, Dong-Hyun Kim, Jong-Seok Kim

Abstract:

This article presents a 10-bit source-driver (SD) IC for high-resolution OLED-on-silicon (OLEDoS) microdisplays in augmented reality (AR)/virtual reality (VR) applications. To address the stringent constraints of aggressive area scaling, sub-microsecond settling time, and high output uniformity, three key techniques are proposed. First, a demultiplexer (DEMUX)-based channel width expansion …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3726042
Publisher: IEEE

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A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications

A 1.2-V, 8.5-ns Settling, Bi-Slewing CMOS Driver for Heavy Loads in Discrete-Time Analog Computing Applications 150 150
Author(s): Maysara Hamada, Mostafa Toubar, Zixu Wang, Nishant Bakshi, Hsiang-Chun Cheng, Mayank Palaria, Joshua Yang, Mike Shuo-Wei Chen

Abstract:

As crossbar-based analog computing grows in popularity for high-speed, energy-efficient processing, the need to drive discrete-time signals to heavy loads arises. This letter presents a novel bi-slewing CMOS driver utilizing high slew-rate error amplifiers and a push–pull stage. The proposed driver achieves a measured settling time of 8.5 ns and …

Published in: IEEE Solid-State Circuits Letters
Page(s): 218 – 221
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3717852
Publisher: IEEE

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A 0.0035-mm2 86-dB-SNR 1.25-MHz-BW Noise-Shaping SAR ADC Enabling kT/C Noise Shaping

A 0.0035-mm2 86-dB-SNR 1.25-MHz-BW Noise-Shaping SAR ADC Enabling kT/C Noise Shaping 150 150
Author(s): Xing Wang, Zhishuai Zhang, Yi Zhong, Nan Sun, Lu Jie

Abstract:

This work presents a compact second-order noise shaping successive approximation register (NS-SAR) analog-to-digital converter (ADC) featuring a novel kT/C noise shaping technique. The proposed kT/C noise shaping technique selectively suppresses kT/C noise within the signal bandwidth of an oversampled SAR ADC. It avoids using a wideband noise …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 2798 – 2808
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3616265
Publisher: IEEE

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A 500-MS/s 12-bit Pipeline-SAR ADC Using a PVT-Robust Triple-Cascoded FIA With Virtual Supply Extension

A 500-MS/s 12-bit Pipeline-SAR ADC Using a PVT-Robust Triple-Cascoded FIA With Virtual Supply Extension 150 150
Author(s): Michele Rocco, Gabriele Zanoletti, Alessia Ceroni, Giacomo Tombolan, Gabriele Bè, Luca Ricci, Salvatore Levantino, Andrea L. Lacaita, Luca Bertulessi, Carlo Samori, Andrea G. Bonfanti

Abstract:

The pipeline-successive approximation register (SAR) analog-to-digital converter (ADC) extends the energy efficiency and the scaling properties of SAR ADCs to the medium-to-high resolutions and high bandwidths typical of classical pipeline ADCs. However, the residue amplifier (RA) is often a performance and energy efficiency bottleneck, especially for high-speed designs in scaled …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3715775
Publisher: IEEE

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A Calibration-Free Frequency-Scalable ΔΣ ADC Incorporating PVT-Robust Dynamic Integration

A Calibration-Free Frequency-Scalable ΔΣ ADC Incorporating PVT-Robust Dynamic Integration 150 150
Author(s): Tohru Kaneko, Hideaki Ishida, Yuzuru Yamaki, Satoshi Takehara, Un-Ku Moon

Abstract:

This article summarizes a calibration-free, frequency-scalable $Delta Sigma $ analog-to-digital converter (ADC) which employs dynamic open-loop integrators for low-power sensing systems. The integrators use a capacitive degeneration scheme to obtain an integration factor determined by a capacitor ratio. To enhance process-voltage-temperature (PVT) robustness, bottom-plate level shift (BPLS) and a timer are …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3719645
Publisher: IEEE

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A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz

A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Qinwen Fan

Abstract:

This article presents a fully integrated shunt-resistor-based in-line current sensor for high-voltage (HV) pulse-width modulation (PWM)-based power systems. Floating-Gm current sensors are effective at rejecting HV PWM common-mode (CM) interference, but their linearity degrades at high CM voltages due to the substrate current-induced body effect (SCBE) in HV laterally …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3716767
Publisher: IEEE

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A 500-MS/s 94-dB-SFDR Resistive-Input Pipelined-SAR ADC With a Current-Buffer-Based Integrating Sampler and Floating Charge Transferrer

A 500-MS/s 94-dB-SFDR Resistive-Input Pipelined-SAR ADC With a Current-Buffer-Based Integrating Sampler and Floating Charge Transferrer 150 150
Author(s): Xiyu He, Mingyang Gu, Yunsong Tao, Siyu Huang, Zhishuai Zhang, Yi Zhong, Nan Sun, Lu Jie

Abstract:

This work presents a pipelined successive approximation register (SAR) analog-to-digital converter (ADC) with a current-buffer-based integrating sampler that combines an easy-to-drive resistive input with high linearity. To overcome the linearity and swing limitations of conventional current-integrating samplers (CISs), the frontend employs a $G_{m}$ -boosted continuous-time (CT) floating charge transferrer (…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 13
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3714848
Publisher: IEEE

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A 12-bit 1-GS/s SAR-Assisted Pipeline ADC With Gain-Stable Dual-Path Residue Amplification and Partially Look-Ahead Parallel Conversion

A 12-bit 1-GS/s SAR-Assisted Pipeline ADC With Gain-Stable Dual-Path Residue Amplification and Partially Look-Ahead Parallel Conversion 150 150
Author(s): Peng Wang, Yaning Wang, Fule Li, Zhihua Wang

Abstract:

This article presents a 12-bit, 1-GS/s SAR-assisted pipelined ADC implemented in 28-nm CMOS featuring accurate residue amplification (RA) with low gain variation. A dual-path residue amplifier embeds an open-loop gain-error-cancellation path within the closed-loop amplification path, providing accurate gain and robust gain stability without additional timing or power overhead. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3713446
Publisher: IEEE

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A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic

A 12 b 180-MS/s Pipelined-SAR ADC With a Low-Power Calibration-Free RA and Hardware-Efficient SAR Logic 150 150
Author(s): Guo Wei, Rui Zhang, Fule Li, Hanjun Jiang, Zhihua Wang

Abstract:

This letter presents a 12-bit, 180-MS/s pipelined-SAR ADC in 65-nm CMOS. To eliminate the complex interstage gain-error calibration for a fast-response characteristic, a high-gain residue amplifier (RA) featuring a two-stage gain-boosting architecture is proposed. By removing the tail current, the RA significantly alleviates slew-rate and voltage headroom limitations. The …

Published in: IEEE Solid-State Circuits Letters
Page(s): 186 – 189
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3697220
Publisher: IEEE

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