6G

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150
Author(s): Runzhou Chen, Hao-Yu Chien, Boxun Yan, Chao-Jen Tien, Mau-Chung Frank Chang

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1776 – 1790
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3644224
Publisher: IEEE

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A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS

A 138 Gb/s D-Band 2-D Scalable Transceiver Array With On-Chip Antennas Achieving Sub-1-pJ/b Efficiency in 28-nm Bulk CMOS 150 150
Author(s): Hesham Beshary, Yikuan Chen, Ali M. Niknejad

Abstract:

This article presents a D-band 2-D scalable phased array that integrates a $2{\,}\times{\,} 2$ transceiving (TRX) radio frequency (RF) beamformer with on-chip antennas (OCAs) and a $\times 16$ local-oscillator (LO) multiplication chain. The 2-D array scalability is demonstrated by tiling $2{\,}\times{\,} 2$ chips into an array using a low-cost package to build a 16…

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 15
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3704818
Publisher: IEEE

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A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI

A 6.3–18.4 GHz I/Q Receiver With RF and LO Path Reconfigurability for 6G FR3 Applications in 22-nm FD-SOI 150 150
Author(s): Haisu Ju, Yingtao Zou, Gabriel M. Rebeiz

Abstract:

This article presents a 6.3–18.4GHz in-phase and quadrature (I/Q) direct down-conversion receiver featuring reconfigurability in both the radio frequency (RF) and local oscillator (LO) paths. The receiver comprises a multi-band reconfigurable RF front-end, double-balanced passive I/Q mixers, an I/Q LO generation network with a tunable I/Q …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3698025
Publisher: IEEE

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An Antenna-to-Bits F-Band 120-Gbps CMOS RF-64QAM Receiver

An Antenna-to-Bits F-Band 120-Gbps CMOS RF-64QAM Receiver 150 150
Author(s): Youssef O. Hassan, Mohammad Oveisi, Zisong Wang, Payam Heydari

Abstract:

A CMOS 100–140-GHz end-to-end receiver (RX) is presented that integrates the antenna input all the way to the bitstream output, while demodulating 64QAM/16QAM/QPSK entirely in the analog domain. A sequential asynchronous demodulation method enables 120-Gbps operation at a notably small baseband power consumption. Fabricated in a 22-nm FDSOI …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 16
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3648748
Publisher: IEEE

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A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth

A Wideband Calibration-Free D-Band Passive Phase Shifter With Frequency-Invariant Codes Over 24% Fractional Bandwidth 150 150
Author(s): Basem Abdelaziz Abdelmagid, Yuqi Liu, Hua Wang

Abstract:

This work presents a compact 110–140 GHz bidirectional D-band passive phase shifter based on combining a 5-stage capacitively-loaded reflective-type PS (RTPS) with a wideband 0°/180° stage. The design achieves a 360° phase range with a resolution of 11.25°. By applying: 1) a wideband RTPS design methodology on the stage level; 2) frequency/switching-staggering techniques among the …

Published in: IEEE Solid-State Circuits Letters
Page(s): 329 – 332
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3622233
Publisher: IEEE

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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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