6G mobile communication

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A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE

A 142–164-GHz Phased-Array AiP Module With High-Power-Density and High-Efficiency Transceiver in 65-nm CMOS for 6G UE 150 150
Author(s): Yudai Yamazaki, Yohei Morishita, Sunghwan Park, Takaya Uchino, Chenxin Liu, Jun Sakamaki, Akihiro Egami, Ryosuke Hasaba, Ken Takahashi, Tomoki Abe, Tomohiro Murata, Yoichi Nakagawa, Takashi Tomura, Hiroshi Taneda, Kei Murayama, Makoto Tsukahara, Hiroko Ota, Yoko Nakabayashi, Ryuji Kinugawa, Takumi Kojima, Anyi Tian, Kotaro Ito, Chun Wang, Hans Herdian, Yi Zhang, Zheng Li, Wenqian Wang, Hongye Huang, Dingxin Xu, Sena Kato, Michihiro Ide, Shinsuke Hara, Issei Watanabe, Akifumi Kasamatsu, Yuncheng Zhang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Koji Takinami, Kenichi Okada

Abstract:

This work presents a D-band high-power-density four-element phased-array transceiver for 6G user equipment (UE). Conventional designs require large multi-stage LO generation circuits for D-band up/down conversion, making it difficult to achieve compact size and low-power consumption. To address this, we propose an integrated LO chain using an injection-locked tripling …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1275 – 1293
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3665184
Publisher: IEEE

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A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers

A 160-Gb/s D-Band Bi-Directional CMOS Mixer Covering 112–170 GHz for 6G Transceivers 150 150
Author(s): Chenxin Liu, Yudai Yamazaki, Anyi Tian, Chun Wang, Hans Herdian, Abanob Shehata, Han Nie, Minzhe Tang, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Kenichi Okada

Abstract:

This work presents a D-band bi-directional CMOS double-balanced mixer (DBM) supporting data rates over 160 Gb/s with a 58-GHz RF bandwidth (112–170 GHz). The mixer employs four identical NMOS passive switches ( $12~\mu $ m/60 nm) in a DBM topology, providing the isolation between RF, LO, and IF ports. Both IF and RF …

Published in: IEEE Solid-State Circuits Letters
Page(s): 241 – 244
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3597690
Publisher: IEEE

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