A 28-Gb/mm2 4XX-Layer 1-Tb 3-b/Cell WF-Bonding 3D-nand Flash With 5.6-Gb/s/Pin IOs https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
The challenge of evolving to create a memory that is shrinking compared to the previous generation while satisfying the high performance and low power required for flash memory has been present in every generation, but the recent rapid change to artificial intelligence (AI) trends is very tough, as the level …