IEEE Solid-State Circuits Letters

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A 10.9nV/√Hz, 74.9dB-DR, 20MS/s Ultrasound Analog Front End for Fully-Digital Beamforming

A 10.9nV/√Hz, 74.9dB-DR, 20MS/s Ultrasound Analog Front End for Fully-Digital Beamforming 150 150
Author(s): Changde Ding, Yan Zhu, Pengjie Wang, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a compact and energy-efficient analog front-end (AFE) circuit for fully-digital beamforming in endoscopic and catheter-based 3D-ultrasound imaging. The AFE converts single-ended analog input from each transducer element into a 10-bit digital output through a low-noise amplifier (LNA) and a 20 MS/s SAR ADC. To minimize chip area …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3581584
Publisher: IEEE

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A Millimeter-Wave Standing-Wave Oscillator With Frequency-Specific Wave-Velocity Control Demonstrating Class-F Effects

A Millimeter-Wave Standing-Wave Oscillator With Frequency-Specific Wave-Velocity Control Demonstrating Class-F Effects 150 150
Author(s): Wei-Yu Lin, Jun-Chau Chien

Abstract:

Implementing dual-resonance class-F oscillators with transformer feedback beyond 60 GHz poses significant challenges due to the limited third-harmonic tank impedance when using small coils with low coupling factors. To address these limitations and leverage the phase noise advantages of class-F operation, this letter introduces a standing-wave oscillator (SWO) topology featuring an …

Published in: IEEE Solid-State Circuits Letters
Page(s): 181 – 184
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3578942
Publisher: IEEE

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A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique

A 6.2b-ENOB 2.5 GS/s Flash-and-VCO-Based Subranging ADC Using a Residue Shifting Technique 150 150
Author(s): Sungjin Kim, Jeonghyun Lee, Yoonse Cho, Jintae Kim, Jaehyouk Choi, Heein Yoon

Abstract:

This letter presents a 7-bit pipelined subranging ADC that integrates a 3-bit flash ADC with a ring VCO-based quantizer. A resistor-ladder-based residue shifter (RLRS) replaces traditional residue amplifiers, efficiently shifting the residue voltage into the most linear region of the $K_{textrm {VCO}}$ , thereby eliminating the need for post-linearity calibration. …

Published in: IEEE Solid-State Circuits Letters
Page(s): 177 – 180
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3578546
Publisher: IEEE

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A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range

A 45-V Auto-Zero-Stabilized Chopper Instrumentation Amplifier With 1.8- μ V Offset, 33.5- μ V Ripple, and 42-V Common-Mode Input Range 150 150
Author(s): Jiahao Wang, Shen Ye, Shiqi Zhang, Zhiliang Hong, Jiawei Xu

Abstract:

This letter presents a 45V high-precision current-feedback instrumentation amplifier (CFIA) that combines both chopping and auto-zeroing (AZ) to achieve 1.8- $mu $ V input offset (10 samples) and 33.5- $mu $ V input-referred ripple. The AZ is duty cycled to minimize power and silicon area, with a parallel auxiliary path operating during AZ …

Published in: IEEE Solid-State Circuits Letters
Page(s): 173 – 176
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3576393
Publisher: IEEE

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A 10 to 40 GHz Reflection-Mode N-Path Filter

A 10 to 40 GHz Reflection-Mode N-Path Filter 150 150
Author(s): Cody J. Ellington, Sandeep Hari, Brian A. Floyd

Abstract:

A bandpass reflection-mode N-path filter (RMNF) with 2-GHz bandwidth and 10 to 40 GHz center-frequency tuning is presented. The design includes a broadband hybrid coupler, N-path reflectors, comprising four-phase passive mixers terminated with third-order in-phase and quadrature-phase active baseband loads, and a broadband clock-generation network. The reflectors realize an in-band open circuit …

Published in: IEEE Solid-State Circuits Letters
Page(s): 169 – 172
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3575536
Publisher: IEEE

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A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS

A 302.5-GHz 30.9-dB-Gain THz Amplifier in 65-nm CMOS 150 150
Author(s): Yu-Kai Chen, Yi-Fan Tseng, Wei-Zhe Su, Chun-Hsing Li

Abstract:

A 302.5-GHz high-gain CMOS THz amplifier is proposed in this work. An electromagnetic (EM) modeling approach, verified by transistor measurements, is employed to optimize transistor layout, effectively reducing gate resistance and drain-to-gate capacitance. This significantly enhances the transistor’s maximum oscillation frequency $f_{mathrm {max }}$ from 239.7 to 367.5 GHz. Furthermore, a $…

Published in: IEEE Solid-State Circuits Letters
Page(s): 165 – 168
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3574413
Publisher: IEEE

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Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields

Two 7–13-GHz GaAs-SiGe Four–Channel Beamforming Chiplets With/Without Metallic Interlayer Shields 150 150
Author(s): Nengxu Zhu, Yiting Zhang, Genyin Ma, Fanyi Meng

Abstract:

This letter presents two 7–13-GHz GaAs-SiGe four-channel beamforming chiplets to minimize the chip area. The chips integrate GaAs-based power amplifiers (PAs) and low-noise amplifiers (LNAs) with silicon-based phase and amplitude control modules using gold bumps. To mitigate coupling between the metal patterns of the heterogeneous chips and avoid interference with …

Published in: IEEE Solid-State Circuits Letters
Page(s): 161 – 164
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3573757
Publisher: IEEE

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