Vertical cavity surface emitting lasers

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI 150 150

Abstract:

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB) $({\lt }5~ \mathrm {GHz})$ and the P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$ junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) …

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A 4 × 50 Gb/s 2.9-pJ/b NRZ VCSEL-Based Co-Packaged Optical Link With Fiber Termination

A 4 × 50 Gb/s 2.9-pJ/b NRZ VCSEL-Based Co-Packaged Optical Link With Fiber Termination 150 150

Abstract:

A four-channel vertical cavity surface-emitting laser (VCSEL)-based co-packaged optical (CPO) transceiver (TRX) is demonstrated, integrating a photodiode (PD) array, a trans-impedance amplifier front-end integrated circuit (TIA-FE IC), an electrical receiver (RX) IC, and optical fiber termination on a single package on the receive side. The transmitter (TX) counterpart incorporates …

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