millimeter wave (mm-wave)

A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur

A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur 150 150

Abstract:

This article presents a fast-settling 60-GHz local oscillator (LO) for stepped-carrier orthogonal frequency-division multiplexing (OFDM), employing an I/Q-calibrated single-sideband (SSB) mixer with a frequency-tuned injection-locked oscillator (ILO) filter. The SSB mixer enables instantaneous frequency hopping, while the ILO acts as a high- $Q$ bandpass filter that suppresses mixer-induced spurs. …

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An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors

An Inductive-Load-Modulated Multiband Phase Shifter With <0.38°/0.12-dB RMS Errors 150 150

Abstract:

This letter presents a compact, multiband reflection-type phase shifter (RTPS) implemented in 65-nm CMOS that overcomes the narrowband limitations of conventional passive loads. The proposed design utilizes an inductive-load modulation. By injecting a secondary signal to actively manipulate the magnetic flux, the equivalent inductance is boosted to enable operation across …

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A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation

A 24.5–45.2-GHz Low-Jitter Compact Differentially Injection-Locked Clock Multiplier With Folded-Inductor-Based Magnetic-Flux Cancellation 150 150

Abstract:

In this article, we present a differentially injection-locked clock multiplier (ILCM) featuring an ultra-wide frequency tuning range (TR) and low jitter, achieved through a compact folded-inductor-based magnetic-flux cancellation technique. A co-designed series-LC dual-mode quadrature ring oscillator (QRO) and edge-combining frequency doubler operating in the mm-wave band jointly extend the TR …

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A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications

A 129–146-GHz Direct-Digital Modulation FinFET Transmitter With On-Chip Mismatch Calibrations for Beyond-5G Wireless Communications 150 150

Abstract:

This article presents a D-band direct-digital modulation (DDM) transmitter with on-chip digital calibration blocks for future beyond-5G (B5G) wireless communication. The proposed DDM architecture mitigates the need for complex intermediate frequency (IF) generation and power-hungry digital-to-analog converters (DACs). The transmitter is implemented primarily in TSMC’s 16-nm p-FinFETs, …

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A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control

A Ka-Band Time-Modulated Phase-Invariant Variable-Gain Amplifier With 30-dB Gain Tuning Based on Duty-Cycle Control 150 150

Abstract:

This article presents a time-modulated variable-gain amplifier (VGA) employing a clock-sampling topology governed by a duty-cycle control (DCC) loop. By modulating the effective operation time of the amplifier rather than altering its RF bias conditions, for precise tuning of the clock duty cycle, enabling phase consistency at millimeter-wave frequencies. The …

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A Third-Harmonic-Enhanced Triple-Push DCO Utilizing Source-Combining Technique

A Third-Harmonic-Enhanced Triple-Push DCO Utilizing Source-Combining Technique 150 150

Abstract:

This article presents a detailed investigation into optimizing the amplitude and phase of the transistor’s terminal voltages to generate a high 3rd-harmonic current in the millimeter-wave (mm-Wave) frequency. Based on the analysis, the digitally controlled source-combining triple-push (SCTP) oscillator is derived to significantly enhance the 3rd-harmonic current by introducing …

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Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers

Inverse Design of Multilayered Pixelated mm-Wave Power Amplifiers 150 150

Abstract:

A topology optimization methodology is presented for the design of multistage, multipath, linear and nonlinear millimeter-wave (mm-Wave) power amplifiers (PAs). Optimization algorithms autonomously generate complete multilayered PA core layouts, including actives and passives, with minimal human intervention in just a few days. Experimental results from fabricated linear and nonlinear W-band …

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220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

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