millimeter wave (mm-wave)

  • No Comments

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS

220 GHz, 8.5-dBm Saturated Output Power Wideband Power Amplifier in SiGe BiCMOS 150 150
Author(s): Xun Chen, Jonas Winkelhake, Muh-Dey Wei, Renato Negra

Abstract:

This letter presents a broadband $G$ -band power amplifier (PA) designed in a 130-nm silicon-germanium (SiGe) bipolar complementary metal-oxide-semiconductor technology. Unlike dual-band matching and staggered tuning techniques to obtain large operation bandwidth (BW), we propose a common broadband amplification stage in this work for its flexibility. In each stage, inductive …

Published in: IEEE Solid-State Circuits Letters
Page(s): 17 – 20
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646267
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur

A Fast-Settling mm-Wave LO With I/Q-Calibrated SSB Mixer and Frequency-Tuned ILO Filter Achieving Sub-ns Settling Time and −56 dBc Spur 150 150
Author(s): Jaewon Oh, Cheol So, Hyojun Kim, Songcheol Hong, SeongHwan Cho

Abstract:

This article presents a fast-settling 60-GHz local oscillator (LO) for stepped-carrier orthogonal frequency-division multiplexing (OFDM), employing an I/Q-calibrated single-sideband (SSB) mixer with a frequency-tuned injection-locked oscillator (ILO) filter. The SSB mixer enables instantaneous frequency hopping, while the ILO acts as a high- $Q$ bandpass filter that suppresses mixer-induced spurs. …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2025
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2025.3634591
Publisher: IEEE

View on IEEE Xplore

Search this website