A 28-nm Sign-Bit-Embedded Bit-Parallel SRAM Compute-in-Memory Macro With Stage-Wise-Enabled Transition-Counting-Lines and Accumulators for Edge-AI Devices https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
Computing-in-memory (CIM) architectures are promising for edge-AI devices, as they mitigate the von Neumann bottleneck and reduce data movement. Bit-parallel CIM macros with direct memory mapping and low toggle rate are well-suited for computing systems. However, severe routing congestion, inefficient signed computation, and unnecessary toggling of intermediate signals in local …