Tunneling magnetoresistance

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A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction

A Compact XOR Gate Implemented With a Single Straintronic Magnetic Tunnel Junction 150 150
Author(s): Supriyo Bandyopadhyay

Abstract:

The xor Boolean logic gate is widely used in many applications such as encryption (xor ciphers), binary addition (half- and full-adders), error detection (parity bits), etc., but is challenging to construct because of its demanding conditional dynamics. It typically requires multiple logic switches or other types of gates, which results …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 185 – 191
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3719208
Publisher: IEEE

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A Stress- and Temperature-Compensated TMR Current Sensor With ±0.13% Sensitivity Variation

A Stress- and Temperature-Compensated TMR Current Sensor With ±0.13% Sensitivity Variation 150 150
Author(s): Tianxiang Qu, Nan Wang, Zuo Zhang, Longxi Xiang, Ting Yi, Zhiliang Hong, Xiaoyang Zeng, Jiawei Xu

Abstract:

This article presents a high-precision tunnel magnetoresistance (TMR)-based non-contact current sensor with enhanced immunity to sensitivity drift. A background sensitivity stabilization loop (SSL) continuously regulates the TMR bias voltage to compensate intrinsic sensitivity variations. Through this closed-loop regulation, sensitivity drift of the TMR sensor induced by temperature, mechanical stress, …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 12
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3719689
Publisher: IEEE

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