Transmission line measurements

  • No Comments

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16nm FinFET Technology

A 200 GHz Wideband and Low-Power Direct-Downconversion Receiver Element in 16nm FinFET Technology 150 150
Author(s): Ethan Chou, Hesham Beshary, Nima Baniasadi, Ali Niknejad

Abstract:

This paper presents a wideband and low-power direct-downconversion 200 GHz receiver element for digital-beamforming applications implemented in 16nm FinFET technology. Wideband and low integrated receiver noise figure of 9.8 dB across a 21 GHz baseband bandwidth is realized with a differential low-noise amplifier leveraging an active input balun stage, while wideband gain of 29 …

Published in: IEEE Solid-State Circuits Letters
Page(s): 1 – 1
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3626442
Publisher: IEEE

View on IEEE Xplore

  • No Comments

A Battery-Free BLE Backscatter Communication Chip for Wearable Systems

A Battery-Free BLE Backscatter Communication Chip for Wearable Systems 150 150
Author(s): Yongling Zhang, Ji Xiong, Junzai Chen, Xiaoyu Li, Jinrui Zuo, Yan Wang, Xiaoyi Wang, Miao Meng

Abstract:

This letter presents a backscatter chip that features bidirectional communication with commodity bluetooth low-energy (BLE) transceivers. For uplink, the chip reflects a reverse-whitened BLE tone into single-sideband (SSB) GFSK-modulated BLE packets via a proposed replica VCO-based GFSK modulator and an inductor-free SSB reflector. For downlink, the BLE packets are frequency …

Published in: IEEE Solid-State Circuits Letters
Page(s): 297 – 300
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3612423
Publisher: IEEE

View on IEEE Xplore

Search this website