Silicon-on-insulator

  • No Comments

1 Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing

1 Transistor-Dynamic Random Access Memory as Reservoir for Temporal Signal Processing 150 150
Author(s): MD Yasir Bashir, C Lalith Adithya Sai, Shubham Sahay

Abstract:

Reservoir computing (RC), a computational paradigm inspired by the recurrent neural networks, offers a promising framework for efficient temporal processing with minimal training overhead. Hardware implementation of RC primitive requires devices that exhibit short-term memory, nonlinearity, and energy-efficient state-switching dynamics. While emerging non-volatile memory (eNVM) technologies have been explored as …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3690766
Publisher: IEEE

View on IEEE Xplore

  • No Comments

The Impact of Magnetic Field on Defective FDSOI and FinFET devices

The Impact of Magnetic Field on Defective FDSOI and FinFET devices 150 150
Author(s): Munazza Sayed, Hussam Amrouch

Abstract:

This paper explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multi-physics Technology CAD (TCAD), we model the impact of static and transient magnetic field on drain current in the following defect-free and defective devices: (a) FDSOI with interface …

Published in: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Page(s): 1 – 1
Year of Publication: 2026
Electronic ISSN: 2329-9231
DOI: 10.1109/JXCDC.2026.3686904
Publisher: IEEE

View on IEEE Xplore

  • No Comments

High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI

High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI 150 150
Author(s): Alessio Antolini, Andrea Lico, Francesco Zavalloni, Lorenzo Greco, Riccardo Zurla, Jacopo Bertolini, Riccardo Vignali, Luca Iannelli, Emanuela Calvetti, Marco Pasotti, Alessandro Cabrini, Eleonora Franchi Scarselli

Abstract:

This article presents a high-precision close-to-analog programming methodology for phase-change memory (PCM) cells, targeting analog in-memory computing (AiMC) architectures for edge-artificial intelligence (AI) applications. By leveraging an iterative accumulation approach during the verify phase, the proposed technique enhances the effective number of bits (ENOBs) achievable in PCM cells. Experimental validation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3680266
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation

Adaptive Linearity Enhancement of Low-Noise Amplifiers Using Doherty Active Load Modulation 150 150
Author(s): Hao Yu, Zhaojing Fu, Lianbo Liu, Qiang Zhou, Taiyun Chi, Sensen Li

Abstract:

This article introduces Doherty active load modulation into low-noise amplifier (LNA) designs to dynamically enhance linearity. Under nominal small-signal conditions, the proposed LNA operates like conventional counterparts, consuming no additional power. When strong in-band blockers are present, auxiliary paths are adaptively engaged to activate a high-linearity mode without incurring a …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 14
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3667125
Publisher: IEEE

View on IEEE Xplore

  • No Comments

On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC

On-Chip Charge-Trap-Transistor-Based Mismatch Calibration of an 8-Bit Thermometer Current-Source DAC 150 150
Author(s): Mohammadreza Zeinali, Sudhakar Pamarti

Abstract:

This letter presents an on-chip mismatch calibration technique for current-source digital-to-analog converters (DACs) using charge-trap transistors (CTTs) in 22-nm FDSOI technology. The proposed method exploits programmable threshold voltage (VTH) shifts in CTTs to locally tune the current of near-minimum-sized devices without external trimming. A compact 8-bit thermometer DAC is implemented …

Published in: IEEE Solid-State Circuits Letters
Page(s): 53 – 56
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2026.3656261
Publisher: IEEE

View on IEEE Xplore

  • No Comments

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI

Dual-Junction Monolithically Integrated Monitoring Photodiode With a Two-Stage 18 GHz 18 pA/√Hz TIA in 22-nm FDSOI 150 150
Author(s): Jelle H. T. Bakker, Nimit Jain, Paul Klatser, Mark S. Oude Alink, Bram Nauta

Abstract:

We present a monolithically integrated (MI) dualjunction monitoring photodiode (PD) and transimpedance amplifier (TIA). The photocurrent originates from the deep Nwell (DNW)/P-type substrate (PSUB) $({\lt }5~ \mathrm {GHz})$ and the P-Well $(\mathrm {PW}) / \mathrm {DNW}({\gt }1~ \mathrm {GHz})$ junctions. The presented combination of bulk PD and 22 nm fully-depleted silicon-on-insulator (FDSOI) …

Published in: IEEE Solid-State Circuits Letters
Page(s): 313 – 316
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3615656
Publisher: IEEE

View on IEEE Xplore

Search this website