Shunts (electrical)

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A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz

A 60-V High-Linearity Shunt-Based In-Line Current Sensor With DLL-Assisted Dynamic Body-Biasing and High dV/dt PWM Rejection Up to 2MHz 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Qinwen Fan

Abstract:

This article presents a fully integrated shunt-resistor-based in-line current sensor for high-voltage (HV) pulse-width modulation (PWM)-based power systems. Floating-Gm current sensors are effective at rejecting HV PWM common-mode (CM) interference, but their linearity degrades at high CM voltages due to the substrate current-induced body effect (SCBE) in HV laterally …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3716767
Publisher: IEEE

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A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection

A High-Linearity Shunt-Based In-Line Current Sensor With Self-Heating Compensation and 14.4 V 2 MHz PWM Rejection 150 150
Author(s): Heng Ma, Huajun Zhang, Yuyan Liu, Marco Berkhout, Qinwen Fan

Abstract:

This article presents a cost-effective, fully integrated shunt-resistor-based in-line current sensor that delivers high linearity and strong PWM rejection, enabling precise current measurement and control in dynamic driving systems like robotics, imaging, and audio. To mitigate the self-heating of the on-chip shunt resistor, which degrades linearity, a location-based thermal compensation …

Published in: IEEE Journal of Solid-State Circuits
Page(s): 1 – 11
Year of Publication: 2026
Electronic ISSN: 1558-173X
DOI: 10.1109/JSSC.2026.3685735
Publisher: IEEE

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A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks

A Broadband and Compact GaN Millimeter-Wave MMIC SPDT Switch Using Modified π-Networks 150 150
Author(s): Chaorong Wang, Quan Pan, Xiaohu Fang

Abstract:

This letter presents a design methodology for broadband and compact millimeter-wave (mm-wave) single-pole double-throw (SPDT) switches targeting the Ku–Ka band. Conventional SPDT switches based on quarter-wavelength transmission line typically occupy significant chip area, while alternative designs utilizing standard $\pi $ -type equivalent circuits often suffer from bandwidth degradation due to …

Published in: IEEE Solid-State Circuits Letters
Page(s): 21 – 24
Year of Publication: 2026
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3646815
Publisher: IEEE

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A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS

A 0.32-pJ/b 100-Gb/s PAM-4 TIA in 28-nm CMOS 150 150
Author(s): Chongyun Zhang, Li Wang, Fuzhan Chen, C. Patrick Yue

Abstract:

This letter presents a 0.32 pJ/bit 100-Gb/s PAM-4 CMOS transimpedance amplifier (TIA). Several techniques are proposed to alleviate TIA design tradeoffs while pushing energy efficiency to a limit. A multipeaking input network is designed to relieve the bandwidth (BW) degradation from parasitics of input interface and ESD diodes. An …

Published in: IEEE Solid-State Circuits Letters
Page(s): 273 – 276
Year of Publication: 2025
Electronic ISSN: 2573-9603
DOI: 10.1109/LSSC.2025.3603569
Publisher: IEEE

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