A Threshold-Voltage Self-Compensated Dual-Gate IGZO TFT Cell for Robust In-Sensor Computing https://sscs.ieee.org/wp-content/themes/movedo/images/empty/thumbnail.jpg 150 150 https://secure.gravatar.com/avatar/8fcdccb598784519a6037b6f80b02dee03caa773fc8d223c13bfce179d70f915?s=96&d=mm&r=g
Abstract:
In-sensor computing (ISC) based on amorphous metal-oxide thin-film transistors (TFTs) promises compact, high-density vision chips, yet large-scale integration is vulnerable to process-induced threshold-voltage ( $V_{th}$ ) variations that critically degrade computational robustness and accuracy. This work proposes a novel 3T1C (3-Transistor, 1-Capacitor) ISC cell circuit based on photodiode (PD)-gated …