low power

A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control

A 430- μ A 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback Control 150 150

Abstract:

This article introduces a high-acoustic-dynamic-range and low-power digital microphone based on the electrostatic force feedback control (EFFC). The proposed design adjusts the sensitivity of the micro-electro-mechanical system (MEMS) by adaptively biasing it at different input amplitudes, thereby extending the dynamic range (DR). The proposed adaptive biasing technique allows the induced …

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A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface

A 76.9 ppm/K Nano-Watt PVT-Insensitive CMOS Voltage Reference Operating From 4 to 300 K for Integrated Cryogenic Quantum Interface 150 150

Abstract:

This work proposes a temperature and process-compensated low-power Cryo-CMOS voltage reference without trimming for quantum integrated interface, which is capable of operating continuously from room temperature (RT) down to cryogenic temperatures. By compensating for the main accuracy limiting factors including the process dependence of the transistor threshold voltage, device mismatch …

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A Low-Power Blocker-Tolerant Wideband Receiver With Bias-Tunable Mixer and Effective Switch Resistance Compensation

A Low-Power Blocker-Tolerant Wideband Receiver With Bias-Tunable Mixer and Effective Switch Resistance Compensation 150 150

Abstract:

This article presents a mixer-first blocker-tolerant receiver (RX) with effective switch resistance ( ${R} _{\text {SW}}$ ) compensation and high-Q selectivity. By analyzing the impact of non-ideal 1/N LO duty cycle and effective ${R} _{\text {SW}}$ on mixer-first RX, an effective ${R} _{\text {SW}}$ compensation technique is proposed to mitigate noise figure (…

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